Search Results - "SAMEER S HADDAD" :: K.UTB vyhledávací portál

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CHARGE TRAP SPLIT GATE DEVICE AND METHOD OF MANUFACTURING THE SAME

by KIM UNSOON, FANG SHENQING, CHANG KUO TUNG, SAMEER S HADDAD, CHEN CHUN, RAMSBEY MARK
Year of Publication 16.12.2021

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CHARGE TRAP SPLIT GATE DEVICE AND METHOD OF MANUFACTURING THE SAME

by KIM UNSOON, FANG SHENQING, CHANG KUO TUNG, SAMEER S HADDAD, CHEN CHUN, RAMSBEY MARK
Year of Publication 25.04.2019

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Resistive memory array using P-I-N diode select device and methods of fabrication thereof

by Choi Seungmoo, Haddad Sameer S
Year of Publication 05.12.2017

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Process of forming an electronic device including a non-volatile memory cell

by Griswold, Mark, Haddad, Sameer S, Greenwood, Bruce B, Chen, Weize, Bates, Kenneth A
Year of Publication 03.01.2023

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Electronic Device Including a Non-Volatile Memory Cell and a Process of Forming the Same

by Griswold, Mark, Haddad, Sameer S, Greenwood, Bruce B, Chen, Weize, Bates, Kenneth A
Year of Publication 11.08.2022

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Memory first process flow and device

by Fang, Shenqing, Haddad, Sameer S, Pak, James, Chen, Chun, Kim, Unsoon, Ramsbey, Mark T, Chang, Kuo Tung
Year of Publication 24.05.2022

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Charge trapping split gate device and method of fabricating same

by Fang, Shenqing, Haddad, Sameer S, Chen, Chun, Kim, Unsoon, Ramsbey, Mark T, Chang, Kuo Tung
Year of Publication 16.02.2021

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Memory First Process Flow and Device

by Fang, Shenqing, KIM, Unsoon, HADDAD, Sameer S, Pak, James, Chen, Chun, Ramsbey, Mark T, Chang, Kuo Tung
Year of Publication 25.03.2021

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Charge Trapping Split Gate Device and Method of Fabricating Same

by Fang, Shenqing, KIM, Unsoon, HADDAD, Sameer S, Chen, Chun, Ramsbey, Mark T, Chang, Kuo Tung
Year of Publication 08.11.2018

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Modified local segmented self-boosting of memory cell channels

by Haddad Sameer S, Li Di, Suh Youseok, Kaza Swaroop
Year of Publication 20.09.2016

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Charge trapping split gate device and method of fabricating same

by Fang, Shenqing, Haddad, Sameer S, Chen, Chun, Kim, Unsoon, Ramsbey, Mark T, Chang, Kuo Tung
Year of Publication 08.05.2018

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Electronic devices including non-volatile memory cells and methods of forming same

by GREENWOOD BRYAN B, HADDAD, SAMEER, S, BATES KENNETH ANDREW, GRESVOORD, MAARTEN, CHEN WEIZE
Year of Publication 09.08.2022

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Verfahren zur Herstellung einer vertikalen nichtflüchtigen Speicherzelle

by LIU, YOUJUANG W, HADDAD, SAMEER S
Year of Publication 13.11.2008

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Method of manufacturing a vertical non-volatile memory cell

by LIU, YOUJUANG, W, HADDAD, SAMEER, S
Year of Publication 05.12.2007

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Channel hot-carrier page write for NAND applications

by HADDAD; SAMEER S
Year of Publication 08.09.1998

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RAMPED OR STEPPED GATE CHANNEL ERASE FOR FLASH MEMORY APPLICATION

by HADDAD, SAMEER, S, SUNKAVALLI, RAVI
Year of Publication 26.02.2003

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Multiple bits-per-cell flash EEPROM memory cells with wide program and erase Vt window

by HADDAD; SAMEER S
Year of Publication 04.08.1998

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Lateral doped channel

by THURGATE TIMOTHY, HADDAD SAMEER S, WONG NGAING
Year of Publication 23.05.2006

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3-D NONVOLATILE MEMORY

by HADDAD SAMEER S, LIU YOWJUANG W
Year of Publication 16.02.2006

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Method of producing a laterally doped channel

by WONG NGAING,THURGATE TIMOTHY,HADDAD SAMEER S
Year of Publication 23.11.2005

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