A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article
A 151-mm 2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, Koichi, Watanabe, Yoshihisa, Makino, Eiichi, Kawakami, Koichi, Sato, Jumpei, Takagiwa, Teruo, Kanagawa, Naoaki, Shiga, Hitoshi, Tokiwa, Naoya, Shindo, Yoshihiko, Ogawa, Takeshi, Edahiro, Toshiaki, Iwai, Makoto, Nagao, Osamu, Musha, Junji, Minamoto, Takatoshi, Furuta, Yuka, Yanagidaira, Kosuke, Suzuki, Yuya, Nakamura, Dai, Hosomura, Yoshikazu, Tanaka, Rieko, Komai, Hiromitsu, Muramoto, Mai, Shikata, Go, Yuminaka, Ayako, Sakurai, Kiyofumi, Sakai, Manabu, Ding, Hong, Watanabe, Mitsuyuki, Kato, Yosuke, Miwa, Toru, Mak, Alexander, Nakamichi, Masaru, Hemink, Gertjan, Lee, Dana, Higashitani, Masaaki, Murphy, Brian, Lei, Bo, Matsunaga, Yasuhiko, Naruke, Kiyomi, Hara, Takahiko
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article
DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE
SAKURAI, Kiyofumi, KOSAKI, Takumi, KOZUKA, Eiji, WATANABE, Toshifumi, HIGASHITSUJI, Teppei
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Year of Publication 12.09.2024
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SEMICONDUCTOR STORAGE DEVICE
MAGOME, Youichi, SAKURAI, Kiyofumi, TAKENAKA, Hiroyuki, CHIBA, Akihiko, HIGASHITSUJI, Teppei, NAKASA, Hiroaki
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Year of Publication 25.01.2024
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Semiconductor storage device
Chiba, Akihiko, Magome, Youichi, Takenaka, Hiroyuki, Sakurai, Kiyofumi, Higashitsuji, Teppei, Nakasa, Hiroaki
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Year of Publication 07.11.2023
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Semiconductor storage device
Takahashi, Yoshiaki, Magome, Youichi, Ozawa, Toru, Nakao, Kouji, Sakurai, Kiyofumi, Mizuta, Yoichi
Year of Publication 21.02.2023
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SEMICONDUCTOR STORAGE DEVICE
MAGOME, Youichi, SAKURAI, Kiyofumi, TAKENAKA, Hiroyuki, CHIBA, Akihiko, HIGASHITSUJI, Teppei, NAKASA, Hiroaki
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Year of Publication 04.08.2022
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SEMICONDUCTOR STORAGE DEVICE
OZAWA, Toru, TAKAHASHI, Yoshiaki, MAGOME, Youichi, SAKURAI, Kiyofumi, NAKAO, Kouji, MIZUTA, Yoichi
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Year of Publication 24.03.2022
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A 56-nm CMOS 99- }^ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput
Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.
Published in IEEE journal of solid-state circuits (01.01.2007)
Published in IEEE journal of solid-state circuits (01.01.2007)
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A 56-nm CMOS 99-mm2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput
TAKEUCHI, Ken, KAMEDA, Yasushi, IWAI, Makoto, SHIRAKAWA, Masanobu, ICHIGE, Masayuki, HATAKEYAMA, Kazuo, TANAKA, Shinichi, KAMEI, Teruhiko, FU, Jia-Yi, CEMEA, Adi, YAN LI, HIGASHITAM, Masaaki, FUJIMURA, Susumu, HEMINK, Gertjan, SATO, Shinji, OOWADA, Ken, LEE, Shih-Chung, HAYASHIDA, Naoki, JUN WAN, LUTZE, Jeffrey, TSAO, Shouchang, MOFIDI, Mehrdad, SAKURAI, Kiyofumi, OTAKE, Hiroyuki, TOKIWA, Naoya, WAKI, Hiroko, NOZAWA, Yasumitsu, KANAZAWA, Kazuhisa, OHSHIMA, Shigeo, HOSONO, Koji, SHIGA, Hitoshi, WATANABE, Yoshihisa, FUTATSUYAMA, Takuya, SHINDO, Yoshihiko, KOJIMA, Masatsugu
Published in IEEE journal of solid-state circuits (2007)
Published in IEEE journal of solid-state circuits (2007)
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Conference Proceeding
Journal Article
A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
FUKUDA, Koichi, WATANABE, Yoshihisa, OGAWA, Takeshi, EDAHIRO, Toshiaki, IWAI, Makoto, NAGAO, Osamu, MUSHA, Junji, MINAMOTO, Takatoshi, FURUTA, Yuka, YANAGIDAIRA, Kosuke, SUZUKI, Yuya, NAKAMURA, Dai, MAKINO, Eiichi, HOSOMURA, Yoshikazu, TANAKA, Rieko, KOMAI, Hiromitsu, MURAMOTO, Mai, SHIKATA, Go, YUMINAKA, Ayako, SAKURAI, Kiyofumi, SAKAI, Manabu, HONG DING, WATANABE, Mitsuyuki, KAWAKAMI, Koichi, KATO, Yosuke, MIWA, Toru, MAK, Alexander, NAKAMICHI, Masaru, HEMINK, Gertjan, LEE, Dana, HIGASHITANI, Masaaki, MURPHY, Brian, BO LEI, MATSUNAGA, Yasuhiko, SATO, Jumpei, NARUKE, Kiyomi, HARA, Takahiko, TAKAGIWA, Teruo, KANAGAWA, Naoaki, SHIGA, Hitoshi, TOKIWA, Naoya, SHINDO, Yoshihiko
Published in IEEE journal of solid-state circuits (2012)
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Published in IEEE journal of solid-state circuits (2012)
Conference Proceeding
A 146-mm2 8-Gb multi-level NAND flash memory with 70-nm CMOS technology
HARA, Takahiko, FUKUDA, Koichi, TAKEUCHI, Yoshiaki, AMEMIYA, Kazumi, MOROOKA, Midori, KAMEI, Teruhiko, NASU, Hiroaki, WANG, Chi-Ming, SAKURAI, Kiyofumi, TOKIWA, Naoya, WAKI, Hiroko, MARUYAMA, Tohru, KANAZAWA, Kazuhisa, YOSHIKAWA, Susumu, HIGASHITANI, Masaaki, PHAM, Tuan D, YUPIN FONG, WATANABE, Toshiharu, SHIBATA, Noboru, HOSONO, Koji, MAEJIMA, Hiroshi, NAKAGAWA, Michio, ABE, Takumi, KOJIMA, Masatsugu, FUJIU, Masaki
Published in IEEE journal of solid-state circuits (2006)
Published in IEEE journal of solid-state circuits (2006)
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Conference Proceeding
Journal Article