Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping
Asano, Takanori, Takaishi, Riichiro, Oda, Minoru, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
(Invited) Defect Generation Mechanism and Its Impact on Reliability Properties in MONOS Devices
Fujii, Shosuke, Kusai, Haruka, Sakuma, Kiwamu, Koyama, Masato
Published in ECS transactions (08.08.2014)
Published in ECS transactions (08.08.2014)
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Journal Article
Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors
Ota, Kensuke, Sakuma, Kiwamu, Irisawa, Toshifumi, Tanaka, Chika, Matsushita, Daisuke, Saitoh, Masumi
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
One-to-one correspondence between nm-resolution channel crystallinity and electrical property of poly-Si TFT revealed by NBD two-dimensional imaging
Asano, Takanori, Takaishi, Riichiro, Oda, Minora, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis
Yoshimura, Yoko, Suzuki, Kunifumi, Ichihara, Reika, Sakuma, Kiwamu, Takahashi, Kota, Matsuo, Kazuhiro, Fujiwara, Makoto, Saitoh, Masumi
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Understanding of polarization reversal and charge trapping under imprint in HfO 2 -FeFET by charge component analysis
Yoshimura, Yoko, Suzuki, Kunifumi, Ichihara, Reika, Sakuma, Kiwamu, Takahashi, Kota, Matsuo, Kazuhiro, Fujiwara, Makoto, Saitoh, Masumi
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics
Schlykow, Viktoria, Suzuki, Kunifumi, Yoshimura, Yoko, Hamai, Takamasa, Sakuma, Kiwamu, Matsuo, Kazuhiro, Suzuki, Masamichi, Saitoh, Masumi, Ichihara, Reika
Published in Japanese Journal of Applied Physics (29.02.2024)
Published in Japanese Journal of Applied Physics (29.02.2024)
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Journal Article
Recovery of cycling-induced degradation of interfacial SiO 2 in HfO 2 -FeFET and its impact on retention characteristics
Schlykow, Viktoria, Suzuki, Kunifumi, Yoshimura, Yoko, Hamai, Takamasa, Sakuma, Kiwamu, Matsuo, Kazuhiro, Suzuki, Masamichi, Saitoh, Masumi, Ichihara, Reika
Published in Japanese Journal of Applied Physics (29.02.2024)
Published in Japanese Journal of Applied Physics (29.02.2024)
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Journal Article
SEMICONDUCTOR DEVICE, SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
MATSUO KAZUNORI, SHIOKAWA TARO, TODA MASAYA, SAKUMA KEIKO, SAKUMA KIWAMU, OKAJIMA MUTSUMI
Year of Publication 29.06.2023
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Year of Publication 29.06.2023
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