Epitaxial growth on porous Si for a new bond and etchback silicon-on-insulator
SATO, N, SAKAGUCHI, K, YAMAGATA, K, FUJIYAMA, Y, YONEHARA, T
Published in Journal of the Electrochemical Society (01.09.1995)
Published in Journal of the Electrochemical Society (01.09.1995)
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Journal Article
High-quality SDI wafer technology for the 0.1-μm era
YONEHARA, Takao, OHMI, Kazuaki, NAKAYAMA, Jun, SAKAGUCHI, Kiyofumi, SATO, Nobuhiko, YAMAGATA, Kenji, KAKIZAKI, Yasuo
Published in Oyo Buturi (10.09.2002)
Published in Oyo Buturi (10.09.2002)
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Journal Article
Advanced quality in epitaxial layer transfer by bond and etch-back of porous Si
SATO, N, SAKAGUCHI, K, YAMAGATA, K, FUJIYAMA, Y, NAKAYAMA, J, YONEHARA, T
Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Conference Proceeding
Journal Article
Extremely high selective etching of porous Si for single etch-stop bond-and-etch-back silicon-on-insulator
SAKAGUCHI, K, SATO, N, YAMAGATA, K, FUJIYAMA, Y, YONEHARA, T
Published in Japanese Journal of Applied Physics (01.02.1995)
Published in Japanese Journal of Applied Physics (01.02.1995)
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Conference Proceeding
Journal Article
DISPLAY APPARATUS
SHIOZAKI ATSUSHI, NAGAYAMA KOHEI, SHIKINA NORIYUKI, IWAKURA YASUSHI, SAKAGUCHI KIYOFUMI
Year of Publication 20.12.2012
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Year of Publication 20.12.2012
Patent
DISPLAY DEVICE
SATO, NOBUHIKO, MORIYAMA, TAKASHI, SHIKINA, NORIYUKI, SAKAGUCHI, KIYOFUMI
Year of Publication 24.11.2011
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Year of Publication 24.11.2011
Patent