Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Takahasi, Masamitu, Fujikawa, Seiji, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Journal Article
Conference Proceeding
In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Lee, Jong-Han, Takahasi, Masamitu, Fujikawa, Seiji, Arafune, Koji, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi
Published in Applied physics express (01.08.2009)
Published in Applied physics express (01.08.2009)
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Journal Article
온-피치 드레인 선택 게이트 전극들을 갖는 3차원 메모리 디바이스 및 그 제조 방법
YADA SHINSUKE, NAGAMINE SAYAKO, ALSMEIER JOHANN, SAI AKIHISA, ORIMOTO TAKASHI, KAI JAMES, ZHANG TONG
Year of Publication 28.01.2020
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Year of Publication 28.01.2020
Patent
Real-time study of strain relaxation in lattice-mismatched InGaAs/GaAs by x-ray diffraction
Sasaki, T., Suzuki, H., Sai, A., Jong-Han Lee, Takahasi, M., Fujikawa, S., Arafune, K., Kamiya, I., Ohshita, Y., Yamaguchi, M.
Published in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) (01.06.2009)
Published in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) (01.06.2009)
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Conference Proceeding