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Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
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Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
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Published in Applied physics express (01.08.2011)
Published in Applied physics express (01.08.2011)
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Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
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Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
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Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage
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Published in Japanese Journal of Applied Physics (01.03.2015)
Published in Japanese Journal of Applied Physics (01.03.2015)
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High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD
ZHI HONG LIU, GEOK ING NG, ARULKUMARAN, Subramaniam, YE KYAW THU MAUNG, KHOON LENG TEO, SIEW CHUEN FOO, SAHMUGANATHAN, Vicknesh, TAO XU, CHEE HOW LEE
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Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs
Zhi Hong Liu, Geok Ing Ng, Arulkumaran, S, Ye Kyaw Thu Maung, Khoon Leng Teo, Siew Chuen Foo, Sahmuganathan, V
Published in IEEE transactions on electron devices (01.02.2011)
Published in IEEE transactions on electron devices (01.02.2011)
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Published in IEEE transactions on electron devices (2011)
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Published in IEEE transactions on electron devices (2011)
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High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With [Formula Omitted] Gate Insulator Grown by ALD
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Published in IEEE electron device letters (01.02.2010)
Published in IEEE electron device letters (01.02.2010)
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High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With hboxAl 2hboxO 3 Gate Insulator Grown by ALD
Liu, Zhi Hong, Ng, Geok Ing, Arulkumaran, Subramaniam, Maung, Ye Kyaw Thu, Teo, Khoon Leng, Foo, Siew Chuen, Sahmuganathan, Vicknesh, Xu, Tao, Lee, Chee How
Published in IEEE electron device letters (01.02.2010)
Published in IEEE electron device letters (01.02.2010)
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High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al 2 O 3 Gate Insulator Grown by ALD
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Published in IEEE electron device letters (01.02.2010)
Published in IEEE electron device letters (01.02.2010)
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