Search Results - "SAGA Koichiro" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

(Invited) Metallic Contamination Issues in Advanced Semiconductor Processing

(Invited) Metallic Contamination Issues in Advanced Semiconductor Processing

by Saga, Koichiro
Published in ECS transactions (23.07.2018)

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Journal Article

(Invited) Metallic Contamination Control in Advanced ULSI Processing

(Invited) Metallic Contamination Control in Advanced ULSI Processing

by Saga, Koichiro
Published in ECS transactions (11.09.2015)

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Journal Article

Influence of surface organic contamination on the incubation time in low-pressure chemical vapor deposition

Influence of surface organic contamination on the incubation time in low-pressure chemical vapor deposition

by SAGA, K, HATTORI, T
Published in Journal of the Electrochemical Society (01.09.1997)

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Journal Article

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

by KUMANO Hideomi, KOBAYASHI Shoji, SAGA Koichiro
Year of Publication 28.12.2023

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Patent

Depth Profile Analysis of Metals Gettered by Oxide Precipitates in Silicon Substrates

by Saga, Koichiro, Ohno, Rikiichi
Published in ECS journal of solid state science and technology (01.01.2017)

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Journal Article

Depth Profile Analysis of Metals Gettered By Bulk Micro-Defects (BMDs) in Silicon Substrates

by Saga, Koichiro, Ohno, Rikiichi
Published in ECS transactions (25.08.2016)

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Journal Article

Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

by Ohno, Rikiichi, Saga, Koichiro
Published in Solid state phenomena (01.09.2016)

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Journal Article

Acceleration of organic contaminant adsorption onto silicon surfaces in the presence of residual fluorine

Acceleration of organic contaminant adsorption onto silicon surfaces in the presence of residual fluorine

by SAGA, K, HATTORI, T
Published in Journal of the Electrochemical Society (01.09.1997)

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Journal Article

MEMORY DEVICE, AND MANUFACTURING METHOD OF MEMORY DEVICE

MEMORY DEVICE, AND MANUFACTURING METHOD OF MEMORY DEVICE

by ITO TAKUYA, SAGA KOICHIRO
Year of Publication 05.10.2017

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Patent

MEMORY ELEMENT AND MEMORY ELEMENT MANUFACTURING METHOD

MEMORY ELEMENT AND MEMORY ELEMENT MANUFACTURING METHOD

by SAGA, Koichiro, ITO, Takuya
Year of Publication 05.10.2017

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Patent

Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic Boxes

Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic Boxes

by Saga, Koichiro, Hattori, Takeshi
Published in Journal of the Electrochemical Society (01.10.1996)

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Journal Article

반도체 장치 및 그 제조 방법

반도체 장치 및 그 제조 방법

by FUJII NOBUTOSHI, SAGA KOICHIRO, SEJIMA KOICHI, MIYAKE SHINICHI
Year of Publication 03.03.2022

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Patent

Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement

Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement

by Ohno, Rikiichi, Saga, Koichiro
Published in Solid state phenomena (01.08.2018)

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Journal Article

촬상 장치 및 수광 소자

촬상 장치 및 수광 소자

by KOJIMA TAKASHI, TOKUHIRO KAI, NAKAZAWA KEIICHI, SAGA KOICHIRO, IMAI SHINICHI, KANEGUCHI TOKIHISA, HIRANO TAKAAKI
Year of Publication 23.06.2023

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Patent

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

by MIYAKE Shinichi, SEJIMA Koichi, FUJII Nobutoshi, SAGA Koichiro
Year of Publication 30.12.2020

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Patent

Behavior of Transition Metals Penetrating Silicon Substrate through SiO2 and Si3N4 Films by Arsenic Ion Implantation and Annealing

Behavior of Transition Metals Penetrating Silicon Substrate through SiO2 and Si3N4 Films by Arsenic Ion Implantation and Annealing

by Saga, Koichiro, Ohno, Rikiichi, Shibata, Daiki, Kobayashi, Shunsuke, Sueoka, Koji
Published in ECS journal of solid state science and technology (01.01.2015)

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Journal Article

IMAGING DEVICE AND LIGHT RECEIVING ELEMENT

IMAGING DEVICE AND LIGHT RECEIVING ELEMENT

by HIRANO, Takaaki, NAKAZAWA, Keiichi, TOKUHIRO, Kai, SAGA, Koichiro, KANEGUCHI, Tokihisa, KOJIMA, Takashi, IMAI, Shinichi
Year of Publication 28.04.2022

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Patent

Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing

Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing

by Sueoka, Koji, Kobayashi, Shunsuke, Saga, Koichiro
Published in Solid state phenomena (01.09.2014)

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Journal Article

Ab Initio Analysis on Stability of Metal Atoms in β-Si 3 N 4 /Si Structure

Ab Initio Analysis on Stability of Metal Atoms in β-Si 3 N 4 /Si Structure

by Shibata, Daiki, Kobayashi, Syunsuke, Sueoka, Koji, Komachi, Jun, Saga, Koichiro
Published in ECS transactions (07.08.2014)

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Journal Article

Behavior of Transition Metals Penetrating Silicon Substrate through SiO 2 and Si 3 N 4 Films by Arsenic Ion Implantation and Annealing

Behavior of Transition Metals Penetrating Silicon Substrate through SiO 2 and Si 3 N 4 Films by Arsenic Ion Implantation and Annealing

by Saga, Koichiro, Ohno, Rikiichi, Shibata, Daiki, Kobayashi, Shunsuke, Sueoka, Koji
Published in ECS journal of solid state science and technology (2015)

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Journal Article

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