Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS
Published in Physical review letters (19.12.1994)
Published in Physical review letters (19.12.1994)
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Journal Article
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
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Journal Article
Submicrometer platinum electrodes by through-mask plating
SAENGER, K. L, COSTRINI, G, KOTECKI, D. E, KWIETNIAK, K. T, ANDRICACOS, P. C
Published in Journal of the Electrochemical Society (01.11.2001)
Published in Journal of the Electrochemical Society (01.11.2001)
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Journal Article
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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Journal Article
Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors
BANIECKI, J. D, LAIBOWITZ, R. B, SHAW, T. M, SAENGER, K. L, DUNCOMBE, P. R, CABRAL, C, KOTECKI, D. E, SHEN, H, LIAN, J, MA, Q. Y
Published in Journal of the European Ceramic Society (1999)
Published in Journal of the European Ceramic Society (1999)
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Conference Proceeding
Journal Article
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM
Kotecki, D E, Baniecki, J D, Shen, H, Laibowitz, R B
Published in IBM journal of research and development (01.05.1999)
Published in IBM journal of research and development (01.05.1999)
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Journal Article
Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers
Cabral, C., Saenger, K. L., Kotecki, D. E., Harper, J. M. E.
Published in Journal of materials research (01.01.2000)
Published in Journal of materials research (01.01.2000)
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Journal Article
Vibrational and rotational relaxation of iodine in seeded supersonic beams
McClelland, G. M, Saenger, K. L, Valentini, J. J, Herschbach, D. R
Published in Journal of physical chemistry (1952) (19.04.1979)
Published in Journal of physical chemistry (1952) (19.04.1979)
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Journal Article
Blue shift of iodine in solvent complexes formed in supersonic molecular beams
Saenger, K. L, McClelland, G. M, Herschbach, D. R
Published in Journal of physical chemistry (1952) (01.10.1981)
Published in Journal of physical chemistry (1952) (01.10.1981)
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Journal Article
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC (2004)
Published in Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC (2004)
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Conference Proceeding
Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion
Yang, Bin, De Souza, Joel, Saenger, Katherine, Bedell, Steve, Reznicek, A., Adam, Thomas N., Hopstaken, Marinus, Sadana, D
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Rooks, M.J., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in Electronics letters (13.11.2003)
Published in Electronics letters (13.11.2003)
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Journal Article