MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers
Tuna, Ö., Hahn, H., Kalisch, H., Giesen, C., Vescan, A., Rzheutski, M.V., Pavlovskii, V.N., Lutsenko, E.V., Yablonskii, G.P., Heuken, M.
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Conference Proceeding
Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN
Arnatkevičiūtė, A., Reklaitis, I., Kadys, A., Malinauskas, T., Stanionytė, S., Juška, G., Rzheutski, M. V., Tomašiūnas, R.
Published in Journal of electronic materials (01.07.2014)
Published in Journal of electronic materials (01.07.2014)
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Journal Article
Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers
Tuna, Ö., Linhart, W.M., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Veal, T.D., McConville, C.F., Giesen, C., Kalisch, H., Vescan, A., Heuken, M.
Published in Journal of crystal growth (01.11.2012)
Published in Journal of crystal growth (01.11.2012)
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Journal Article
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
Lutsenko, E. V., Rzheutski, M. V., Vainilovich, A. G., Svitsiankou, I. E., Shulenkova, V. A., Muravitskaya, E. V., Alexeev, A. N., Petrov, S. I., Yablonskii, G. P.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells
Lutsenko, E.V., Rzheutski, M.V., Nagorny, A.V., Danilchyk, A.V., Nechaev, D.V., Jmerik, V.N., Ivanov, S.V.
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
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Journal Article
Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy
Nechaev, D V, Evropeytsev, E A, Semenov, A N, Troshkov, S I, Egorkin, V I, Zemlyakov, V E, Rzheutski, M V, Lutsenko, E V, Toropov, A A, Ivanov, S V, Jmerik, V N
Published in Journal of physics. Conference series (01.03.2018)
Published in Journal of physics. Conference series (01.03.2018)
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Journal Article
High temperature ammonia MBE—Real way to improve crystal quality of nitride heterostructures
Petrov, S.I., Alexeev, A.N., Mamaev, V.V., Novikov, S.A., Lutsenko, E.V., Rzheutski, M.V.
Published in Journal of crystal growth (15.05.2019)
Published in Journal of crystal growth (15.05.2019)
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Journal Article
Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy
Lutsenko, E.V., Rzheutski, M.V., Vainilovich, A.G., Svitsiankou, I.E., Nagorny, A.V., Shulenkova, V.A., Yablonskii, G.P., Alekseev, A.N., Petrov, S.I., Solov'ev, Ya.A., Pyatlitski, A.N., Zhigulin, D.V., Solodukha, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
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Journal Article
AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES
M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko
Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (07.12.2019)
Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (07.12.2019)
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Journal Article
MOVPE growth and investigation of AlInN/AlN multiple quantum wells
Mauder, C., Khoshroo, L. Rahimzadeh, Rzheutski, M. V., Lutsenko, E. V., Yablonskii, G., Kozlovsky, V. I., Woitok, J., Dikme, Y., Heuken, M., Kalisch, H., Jansen, R. H.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals
Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Naghiyev, T.G., Tagiev, B.G., Abushev, S.A., Tagiev, O.B.
Published in Journal of luminescence (01.01.2017)
Published in Journal of luminescence (01.01.2017)
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Journal Article
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al{sub 2}O{sub 3}
Lutsenko, E. V., Rzheutski, M. V., Vainilovich, A. G., Svitsiankou, I. E., Shulenkova, V. A., Muravitskaya, E. V., Alexeev, A. N., Petrov, S. I., Yablonskii, G. P.
Published in Semiconductors (Woodbury, N.Y.) (15.12.2018)
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Published in Semiconductors (Woodbury, N.Y.) (15.12.2018)
Journal Article
Optical and structural properties of GaN epitaxial layers on LiAlO sub(2) substrates and their correlation with basal-plane stacking faults
Lutsenko, E V, Rzheutski, M V, Pavlovskii, V N, Yablonskii, G P, Alanzi, M, Hamidalddin, A, Alyamani, A, Mauder, C, Kalisch, H, Reuters, B, Heuken, M, Vescan, A, Naresh-Kumar, G, Trager-Cowan, C
Published in Journal of crystal growth (15.01.2016)
Published in Journal of crystal growth (15.01.2016)
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Journal Article
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Alanzi, M., Hamidalddin, A., Alyamani, A., Mauder, C., Kalisch, H., Reuters, B., Heuken, M., Vescan, A., Naresh-Kumar, G., Trager-Cowan, C.
Published in Journal of crystal growth (15.01.2016)
Published in Journal of crystal growth (15.01.2016)
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Journal Article
Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping
Lutsenko, E V, Pavlovskii, V N, Danilchyk, A V, Rzheutski, M V, Vainilovich, A G, Zubialevich, V Z, Muravitskaya, A V, Yablonskii, G P
Published in 2010 International Conference on Advanced Optoelectronics and Lasers (01.09.2010)
Published in 2010 International Conference on Advanced Optoelectronics and Lasers (01.09.2010)
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Conference Proceeding
Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures
Lutsenko, E. V., Rzheutski, M. V., Pavlovskii, V. N., Alyamani, A., Aljohenii, M., Aljerwii, A., Mauder, C., Reuters, B., Kalisch, H., Heuken, M., Vescan, A.
Published in Journal of applied spectroscopy (2016)
Published in Journal of applied spectroscopy (2016)
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Journal Article
SETUP FOR MEASUREMENT OF THE PHOTOMETRIC, RADIOMETRIC, SPECTRAL AND SPATIAL CHARACTERISTICS OF RADIATION OF LASER DIODES AND LEDS IN THE SPECTRAL RANGE FROM 250 TO 900 NM
S. V. Nikanenka, E. V. Lutsenko, A. V. Danilchyk, V. A. Dlugunovich, V. A. Zhdanovskii, A. V. Kreidzich, A. A. Liplianin, M. V. Rzheutski
Published in Pribory i metody izmererij (01.08.2015)
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Published in Pribory i metody izmererij (01.08.2015)
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