FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image Sensors
Ryu, Ju Tae, Jeon, Seong Bae, Koh, Hyun Seung, Kim, Tae Whan
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
Get full text
Journal Article
Mobility degradation mechanisms of MOSFETs with a high-k dielectric layer
Jung, Hyun Soo, Ryu, Ju Tae, Kim, Dong Hun, Kim, Tae Whan
Published in Journal of nanoscience and nanotechnology (01.11.2014)
Published in Journal of nanoscience and nanotechnology (01.11.2014)
Get more information
Journal Article
Reliability Degeneration Mechanisms of the 20-nm Flash Memories Due to the Word Line Stress
Jung, Hyun Soo, Ryu, Ju Tae, Yoo, Keon-Ho, Kim, T W
Published in Journal of nanoscience and nanotechnology (01.02.2016)
Published in Journal of nanoscience and nanotechnology (01.02.2016)
Get more information
Journal Article
Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure
Ryu, Ju Tae, Jang, Sung Hwan, Kim, Tae Whan
Published in Japanese Journal of Applied Physics (01.06.2014)
Published in Japanese Journal of Applied Physics (01.06.2014)
Get full text
Journal Article
MOS capacitor and image sensor having the same
Hwang, Sun-Ha, Kim, Kwang-Deok, Lee, Ho-Ryeong, Kwag, Pyong-Su, Park, Sang-Uk, Ryu, Ju-Tae
Year of Publication 13.08.2019
Get full text
Year of Publication 13.08.2019
Patent
MOS CAPACITOR AND IMAGE SENSOR HAVING THE SAME
HWANG, Sun-Ha, RYU, Ju-Tae, PARK, Sang-Uk, KWAG, Pyong-Su, KIM, Kwang-Deok, LEE, Ho-Ryeong
Year of Publication 27.09.2018
Get full text
Year of Publication 27.09.2018
Patent
MOS CAPACITOR AND IMAGE SENSOR HAVING THE SAME
HWANG, SUN HA, KIM, KWANG DEOK, RYU, JU TAE, KWAG, PYONG SU, LEE, HO RYEONG, PARK, SANG UK
Year of Publication 08.10.2018
Get full text
Year of Publication 08.10.2018
Patent