Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies
Campbell, Jason P, Ryan, Jason T, Shrestha, Pragya R, Liu, Zhanglong, Vaz, Canute, Kim, Ji-Hong, Georgiou, Vasileia, Cheung, Kin P
Published in Analytical chemistry (Washington) (05.05.2015)
Published in Analytical chemistry (Washington) (05.05.2015)
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Journal Article
Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- k Gate Stacks
Bersuker, G, Chang Seo Park, Huang-Chun Wen, Choi, K, Price, J, Lysaght, P, Hsing-Huang Tseng, Sharia, O, Demkov, A, Ryan, J T, Lenahan, P
Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Journal Article
Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs
Chbili, Zakariae, Matsuda, Asahiko, Chbili, Jaafar, Ryan, Jason T., Campbell, Jason P., Lahbabi, Mhamed, Ioannou, Dimitris E., Cheung, Kin P.
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article
Observation of strong reflection of electron waves exiting a ballistic channel at low energy
Vaz, Canute I., Liu, Changze, Campbell, Jason P., Ryan, Jason T., Southwick, Richard G., Gundlach, David, Oates, Anthony S., Huang, Ru, Cheung, Kin. P.
Published in AIP advances (01.06.2016)
Published in AIP advances (01.06.2016)
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Journal Article
Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications
Moxim, Stephen J., Harmon, Nicholas J., Myers, Kenneth J., Ashton, James P., Frantz, Elias B., Flatté, Michael E., Lenahan, Patrick M., Ryan, Jason T.
Published in Journal of applied physics (21.04.2024)
Published in Journal of applied physics (21.04.2024)
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Journal Article
Survival after abdominal aortic aneurysm repair is affected by socioeconomic status
Al Adas, Ziad, Nypaver, Timothy J., Shepard, Alexander D., Weaver, Mitchell R., Ryan, Jason T., Huang, Jordan, Harriz, Rob, Kabbani, Loay S.
Published in Journal of vascular surgery (01.05.2019)
Published in Journal of vascular surgery (01.05.2019)
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Journal Article
Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection
Shrestha, Pragya R, Abhyankar, Nandita, Anders, Mark A, Cheung, Kin P, Gougelet, Robert, Ryan, Jason T, Szalai, Veronika, Campbell, Jason P
Published in Analytical chemistry (Washington) (03.09.2019)
Published in Analytical chemistry (Washington) (03.09.2019)
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Journal Article
Analysis and Control of RRAM Overshoot Current
Shrestha, Pragya R., Nminibapiel, David M., Campbell, Jason P., Ryan, Jason T., Veksler, Dmitry, Baumgart, Helmut, Cheung, Kin P.
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs
Lenahan, Patrick M., Anders, Mark A., Ryan, Jason T.
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature
Georgiou, Vasileia, Veksler, Dmitry, Ryan, Jason T., Campbell, Jason P., Shrestha, Pragya R., Ioannou, Dimitris E., Cheung, Kin P.
Published in Advanced functional materials (21.02.2018)
Published in Advanced functional materials (21.02.2018)
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Journal Article
Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station
McCrory, Duane J, Anders, Mark A, Ryan, Jason T, Shrestha, Pragya R, Cheung, Kin P, Lenahan, Patrick M, Campbell, Jason P
Published in Review of scientific instruments (01.01.2019)
Published in Review of scientific instruments (01.01.2019)
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Journal Article
Impact of RRAM Read Fluctuations on the Program-Verify Approach
Nminibapiel, David M., Veksler, Dmitry, Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Cheung, Kin P.
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
Rapid and Accurate C - V Measurements
Ji-Hong Kim, Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Nminibapiel, David, Kopanski, Joseph J., Cheung, Kin P.
Published in IEEE transactions on electron devices (01.10.2016)
Published in IEEE transactions on electron devices (01.10.2016)
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Journal Article
Model for the Bipolar Amplification Effect
Ashton, James P., Moxim, Stephen J., Purcell, Ashton D., Lenahan, Patrick M., Ryan, Jason T.
Published in 2021 IEEE International Integrated Reliability Workshop (IIRW) (04.10.2021)
Published in 2021 IEEE International Integrated Reliability Workshop (IIRW) (04.10.2021)
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Conference Proceeding
Accurate Fast Capacitance Measurements for Reliable Device Characterization
Shrestha, Pragya R., Cheung, Kin P., Campbell, Jason Paul, Ryan, Jason T., Baumgart, Helmut
Published in IEEE transactions on electron devices (01.07.2014)
Published in IEEE transactions on electron devices (01.07.2014)
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Journal Article
Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Bersuker, Gennadi, Veksler, Dmitry, Nminibapiel, David M., Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Mason, Maribeth S., Cheung, Kin P.
Published in Journal of computational electronics (01.12.2017)
Published in Journal of computational electronics (01.12.2017)
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Journal Article
Wafer level EDMR: Magnetic resonance in a probing station
McCrory, Duane J., Anders, Mark A., Ryan, Jason T, Shrestha, Pragya R., Campbell, Jason P., Lenahan, Patrick M., Cheung, Kin P.
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
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Conference Proceeding
On the Contribution of Bulk Defects on Charge Pumping Current
Ryan, J. T., Southwick, R. G., Campbell, J. P., Cheung, K. P., Suehle, J. S.
Published in IEEE transactions on electron devices (01.11.2012)
Published in IEEE transactions on electron devices (01.11.2012)
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Journal Article