Effect of plasma process on n-GaN surface probed with electrochemical short loop
Pernel, Carole, Berthou, William, Suman, Sidharth, Ruel, Simon, Vauche, Laura
Published in Power electronic devices and components (01.10.2023)
Published in Power electronic devices and components (01.10.2023)
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Journal Article
H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces
Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew
Published in Applied surface science (30.04.2022)
Published in Applied surface science (30.04.2022)
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Journal Article
H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces
Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew
Published in Applied surface science (25.12.2021)
Published in Applied surface science (25.12.2021)
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Journal Article
Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations
Piotrowic, C., Mohamad, B., Rocha, P. Fernandes Paes Pinto, Malbert, N., Ruel, S., Pimenta-Barros, P., Jaud, M.-A., Vauche, L., Royer, C. Le
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL
RUEL, Simon, PIMENTA BARROS, Patricia, HELMER, Bryan, THOUEILLE, Philippe, POSSEME, Nicolas
Year of Publication 09.10.2024
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Year of Publication 09.10.2024
Patent
METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL
RUEL, Simon, PIMENTA BARROS, Patricia, HELMER, Bryan, THOUEILLE, Philippe, POSSEME, Nicolas
Year of Publication 01.06.2023
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Year of Publication 01.06.2023
Patent
METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL
Helmer, Bryan, Pimenta Barros, Patricia, Thoueille, Philippe, Posseme, Nicolas, Ruel, Simon
Year of Publication 31.05.2023
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Year of Publication 31.05.2023
Patent
6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts
Morvan, E., Gobil, Y., Morisot, F., Biscarat, J., Charles, M., Lugo, J., Divay, A., Medbouhi, M., Charlet, I., Delprato, J., Scheiblin, P., Rrustemi, B., Giry, A., Serhan, A., Ruel, S., Pimenta-Barros, P., Laulagnet, F., Minoret, S., Anotta, A., Billon, T., Duriez, B.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding