A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes
Zhu, S., Van Meirhaeghe, R.L., Detavernier, C., Ru, G.-P., Li, B.-Z., Cardon, F.
Published in Solid state communications (01.10.1999)
Published in Solid state communications (01.10.1999)
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Journal Article
Effect of erbium interlayer on nickel silicide formation on Si(1 0 0)
Huang, W., Min, Y.L., Ru, G.P., Jiang, Y.L., Qu, X.P., Li, B.Z.
Published in Applied surface science (30.01.2008)
Published in Applied surface science (30.01.2008)
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Journal Article
The properties of Ru on Ta-based barriers
Tan, Jing-Jing, Qu, Xin-Ping, Xie, Qi, Zhou, Yi, Ru, Guo-Ping
Published in Thin solid films (10.05.2006)
Published in Thin solid films (10.05.2006)
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Journal Article
Conference Proceeding
Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction
Qu, Xin-Ping, Jiang, Yu-Long, Ru, Guo-Ping, Lu, Fang, Li, Bing-Zong, Detavernier, C., Van Meirhaeghe, R.L.
Published in Thin solid films (01.09.2004)
Published in Thin solid films (01.09.2004)
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Journal Article
Improvement of Er-silicide formation on Si(100) by W capping
Huang, W., Ru, G.P., Jiang, Y.L., Qu, X.P., Li, B.Z., Liu, R.
Published in Thin solid films (30.04.2008)
Published in Thin solid films (30.04.2008)
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Journal Article
Effects of preannealing on the diffusion barrier properties for ultrathin W–Si–N thin film
Qu, Xin-Ping, Lu, Hua, Peng, Tao, Ru, Guo-Ping, Li, Bing-Zong
Published in Thin solid films (01.09.2004)
Published in Thin solid films (01.09.2004)
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Journal Article
Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
Li, A.Z., Zhong, J.Q., Zheng, Y.L., Wang, J.X., Ru, G.P., Bi, W.G., Qi, M.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Journal Article
Conference Proceeding
Ru thin film grown on TaN by plasma enhanced atomic layer deposition
Xie, Qi, Jiang, Yu-Long, Musschoot, Jan, Deduytsche, Davy, Detavernier, Christophe, Van Meirhaeghe, Roland L., Van den Berghe, Sven, Ru, Guo-Ping, Li, Bing-Zong, Qu, Xin-Ping
Published in Thin solid films (30.06.2009)
Published in Thin solid films (30.06.2009)
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Journal Article
Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
Guo, Xiao, Tang, Yang, Jiang, Yu-Long, Qu, Xin-Ping, Ru, Guo-Ping, Zhang, David Wei, Deduytsche, Davy, Detavernier, Christophe
Published in Microelectronic engineering (01.06.2013)
Published in Microelectronic engineering (01.06.2013)
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Journal Article
Conference Proceeding
The behavior of dopant incorporation and internal strain in AlxGa1-xAs0.03Sb0.97 grown by molecular beam epitaxy
LI, A. Z, WANG, J. X, ZHENG, Y. L, RU, G. P, BI, W. G, CHEN, Z. X, ZHU, N. C
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Conference Proceeding
Journal Article
Pt interlayer effects on Ni germanosilicide formation and contact properties
Xu, Yao-Juan, Ru, Guo-Ping, Jiang, Yu-Long, Qu, Xin-Ping, Li, Bing-Zong
Published in Applied surface science (15.10.2009)
Published in Applied surface science (15.10.2009)
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Journal Article
X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions
Jiang, Yu-Long, Ru, Guo-Ping, Qu, Xin-Ping, Li, Bing-Zong
Published in Applied surface science (15.11.2009)
Published in Applied surface science (15.11.2009)
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Journal Article
A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy
Zhu, Shiyang, Detavernier, C, Meirhaeghe, R L Van, Qu, Xin-Ping, Ru, Guo-Ping, Cardon, F, Li, Bing-Zong
Published in Semiconductor science and technology (01.04.2000)
Published in Semiconductor science and technology (01.04.2000)
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Journal Article
Effects of the annealing temperature on Ni silicide/n-Si(1 0 0) Schottky contacts
Zhu, Shiyang, Van Meirhaeghe, R.L., Forment, S., Ru, Guoping, Li, Bingzong
Published in Solid-state electronics (2004)
Published in Solid-state electronics (2004)
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Journal Article
Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer
Zhu, Shiyang, Van Meirhaeghe, R.L., Forment, S., Ru, Guo-Ping, Qu, Xin-Ping, Li, Bing-Zong
Published in Solid-state electronics (01.07.2004)
Published in Solid-state electronics (01.07.2004)
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Journal Article
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
Ru, Guo-Ping, Van Meirhaeghe, R.L., Forment, S., Jiang, Yu-Long, Qu, Xin-Ping, Zhu, Shiyang, Li, Bing-Zong
Published in Solid-state electronics (01.04.2005)
Published in Solid-state electronics (01.04.2005)
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Journal Article