X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
Sohel, Shahadat H., Xie, Andy, Beam, Edward, Xue, Hao, Roussos, Jason A., Razzak, Towhidur, Bajaj, Sanyam, Cao, Yu, Meyer, David J., Lu, Wu, Rajan, Siddharth
Published in IEEE electron device letters (01.12.2018)
Published in IEEE electron device letters (01.12.2018)
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Journal Article
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction
Caddemi, Alina, Boglione, Luciano, Cardillo, Emanuele, Crupi, Giovanni, Roussos, Jason A.
Published in IEEE transactions on microwave theory and techniques (01.03.2021)
Published in IEEE transactions on microwave theory and techniques (01.03.2021)
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Journal Article
Dynamic mode suppression and frequency tuning in S-band GaN/YIG magnetoelastic HBARs
Gokhale, Vikrant J., Jander, Albrecht, Downey, Brian P., Dhagat, Pallavi, Mack, Shawn C., Scott Katzer, D., Roussos, Jason A., Meyer, David J.
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.08.2023)
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.08.2023)
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Journal Article
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Jin, Eric N., Downey, Brian P., Gokhale, Vikrant J., Roussos, Jason A., Hardy, Matthew T., Growden, Tyler A., Nepal, Neeraj, Katzer, D. Scott, Calame, Jeffrey P., Meyer, David J.
Published in APL materials (01.11.2021)
Published in APL materials (01.11.2021)
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Journal Article
High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates
Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Room Temperature Nanophononics from 1 GHz - 110 GHz with Composite Piezoelectric Transducer HBARs
Gokhale, Vikrant J., Roussos, Jason A., Hardy, Matthew T., Katzer, D. Scott, Downey, Brian P.
Published in 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) (21.01.2024)
Published in 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) (21.01.2024)
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Conference Proceeding
Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices
Gokhale, Vikrant J., Downey, Brian P., Hardy, Matthew T., Jin, Eric N., Roussos, Jason A., Meyer, David J.
Published in 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS) (01.01.2020)
Published in 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS) (01.01.2020)
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Conference Proceeding
Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors
Meyer, David J., Koehler, Andrew D., Hobart, Karl D., Eddy, Charles R., Feygelson, Tatyana I., Anderson, Travis J., Roussos, Jason A., Tadjer, Marko J., Downey, Brian P., Katzer, D. Scott, Pate, Bradford B., Ancona, Mario G.
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
InAlN/AlN/GaN MIS-HEMTs With 10.8 \cdot Johnson Figure of Merit
Downey, Brian P., Meyer, David J., Katzer, D. Scott, Roussos, Jason A., Ming Pan, Xiang Gao
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
[Formula Omitted]/InAlN/AlN/GaN MIS-HEMTs With 10.8 [Formula Omitted] Johnson Figure of Merit
Downey, Brian P, Meyer, David J, Katzer, D Scott, Roussos, Jason A, Pan, Ming, Gao, Xiang
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz.V Johnson Figure of Merit
DOWNEY, Brian P, MEYER, David J, SCOTT KATZER, D, ROUSSOS, Jason A, MING PAN, XIANG GAO
Published in IEEE electron device letters (2014)
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Published in IEEE electron device letters (2014)
Journal Article
Reliability life-testing and failure-analysis of GaAs monolithic Ku-band driver amplifiers
Mittereder, J.A., Roussos, J.A., Christianson, K.A., Anderson, W.T.
Published in IEEE transactions on reliability (01.06.1998)
Published in IEEE transactions on reliability (01.06.1998)
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Journal Article
Accelerated life testing and failure analysis of single stage MMIC amplifiers
Christianson, K.A., Roussos, J.A., Anderson, W.T.
Published in IEEE transactions on electron devices (01.08.1994)
Published in IEEE transactions on electron devices (01.08.1994)
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Journal Article
High Electron Velocity Submicrometer AIN/GaN MOS-HEMTs on Freestanding GaN Substrates
MEYER, David J, DEEN, David A, PASKOVA, Tanya, PREBLE, Edward A, EVANS, Keith R, STORM, David F, ANCONA, Mario G, KATZER, D. Scott, BASS, Robert, ROUSSOS, Jason A, DOWNEY, Brian P, BINARI, Steven C, GOUGOUSI, Theodosia
Published in IEEE electron device letters (2013)
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Published in IEEE electron device letters (2013)
Journal Article
(Invited) RF Power Performance of Nanocrystalline Diamond Coated InAlN/AlN/GaN HEMTs
Downey, Brian P., Meyer, David J., Ancona, Mario G., Feygelson, Tatyana I, Pate, Bradford B, Roussos, Jason A., Tadjer, Marko J., Anderson, Travis J, Hardy, Matthew T, Nepal, Neeraj, Eddy, Charles R.
Published in ECS transactions (23.08.2016)
Published in ECS transactions (23.08.2016)
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Journal Article
Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz
Downey, Brian P., Meyer, David J., Roussos, Jason A., Katzer, D. Scott, Ancona, Mario G., Ming Pan, Xiang Gao
Published in IEEE transactions on device and materials reliability (01.12.2015)
Published in IEEE transactions on device and materials reliability (01.12.2015)
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Magazine Article
(Invited) What's Next after GaN? How about More GaN
Meyer, David J., Downey, Brian P., Hardy, Matthew T., Storm, David F., Katzer, D. Scott, Ancona, Mario G., Nepal, Neeraj, Roussos, Jason A.
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
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Journal Article
Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction
Mittereder, J.A., Roussos, J.A., Anderson, W.T., Ioannou, D.E.
Published in IEEE transactions on reliability (01.12.2002)
Published in IEEE transactions on reliability (01.12.2002)
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Journal Article