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Year of Publication 05.05.2009
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Crystallographic preferential etch to define a recessed-region for epitaxial growth
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Year of Publication 05.05.2009
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Year of Publication 16.06.2017
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CRYSTALLOGRAPHIC PREFERENTIAL ETCH TO DEFINE A RECESSED-REGION FOR EPITAXIAL GROWTH
ROTONDARO, ANTONIO LUIS, PACHECO, KOONTZ, ELISABETH, MARLEY, HURD, TRACE, Q
Year of Publication 24.07.2008
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Year of Publication 24.07.2008
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Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures
Rotondaro, A.L.P., Magnusson, U.K., Claeys, C., Flandre, D., Terao, A., Colinge, J.-P.
Published in IEEE transactions on electron devices (01.04.1993)
Published in IEEE transactions on electron devices (01.04.1993)
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Journal Article
CRYSTALLOGRAPHIC PREFERENTIAL ETCH TO DEFINE A RECESSED-REGION FOR EPITAXIAL GROWTH
ROTONDARO, ANTONIO LUIS, PACHECO, KOONTZ, ELISABETH, MARLEY, HURD, TRACE, Q
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Year of Publication 01.11.2007
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Year of Publication 13.10.2009
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Year of Publication 13.10.2009
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Defect control in gate dielectrics
Colombo, Luigi, Chambers, James J, Visokay, Mark R, Rotondaro, Antonio Luis Pacheco
Year of Publication 13.10.2009
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Year of Publication 13.10.2009
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Work function control of metals
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Year of Publication 13.10.2009
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Year of Publication 13.10.2009
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Defect control in gate dielectrics
COLOMBO LUIGI, ROTONDARO ANTONIO LUIS PACHECO, VISOKAY MARK R, CHAMBERS JAMES J
Year of Publication 13.10.2009
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Year of Publication 13.10.2009
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