Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs
Bigang Min, Devireddy, S.P., Celik-Butler, Z., Shanware, A., Colombo, L., Green, K., Chambers, J.J., Visokay, M.R., Rotondaro, A.L.P.
Published in IEEE transactions on electron devices (01.06.2006)
Published in IEEE transactions on electron devices (01.06.2006)
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Journal Article
Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures
Rotondaro, A.L.P., Magnusson, U.K., Claeys, C., Flandre, D., Terao, A., Colinge, J.-P.
Published in IEEE transactions on electron devices (01.04.1993)
Published in IEEE transactions on electron devices (01.04.1993)
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Journal Article
Micro-reactors for characterization of nanostructure-based sensors
Savu, R, Silveira, J V, Flacker, A, Vaz, A R, Joanni, E, Pinto, A C, Gobbi, A L, Santos, T E A, Rotondaro, A L P, Moshkalev, S A
Published in Review of scientific instruments (01.05.2012)
Published in Review of scientific instruments (01.05.2012)
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Journal Article
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
Chidambaram, P.R., Smith, B.A., Hall, L.H., Bu, H., Chakravarthi, S., Kim, Y., Samoilov, A.V., Kim, A.T., Jones, P.J., Irwin, R.B., Kim, M.J., Rotondaro, A.L.P., Machala, C.F., Grider, D.T.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding
Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process
Chatterjee, A., Chapman, R.A., Dixit, G., Kuehne, J., Hattangady, S., Yang, H., Brown, G.A., Aggarwal, R., Erdogan, U., He, Q., Hanratty, M., Rogers, D., Murtaza, S., Fang, S.J., Kraft, R., Rotondaro, A.L.P., Hu, J.C., Terry, M., Lee, W., Fernando, C., Konecni, A., Wells, G., Frystak, D., Bowen, C., Rodder, M., Chen, I.-C.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
Shanware, A., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Aur, S., Nicollian, P.E., McPherson, J., Colombo, L.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
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Conference Proceeding
The kink-related excess low-frequency noise in silicon-on-insulator MOST's
Simoen, E., Magnusson, U., Rotondaro, A.L.P.
Published in IEEE transactions on electron devices (01.03.1994)
Published in IEEE transactions on electron devices (01.03.1994)
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Journal Article
Transient effects in accumulation mode p-channel SOI MOSFET's operating at 77 K
Martino, J.A., Rotondaro, A.L.P., Simoen, E., Magnusson, U., Claeys, C.
Published in IEEE transactions on electron devices (01.04.1994)
Published in IEEE transactions on electron devices (01.04.1994)
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Journal Article
Advanced CMOS transistors with a novel HfSiON gate dielectric
Rotondaro, A.L.P., Visokay, M.R., Chambers, J.J., Shanware, A., Khamankar, R., Bu, H., Laaksonen, R.T., Tsung, L., Douglas, M., Kuan, R., Bevan, M.J., Grider, T., McPherson, J., Colombo, L.
Published in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) (2002)
Published in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) (2002)
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Conference Proceeding
Low temperature behaviour of submicron accumulation mode p-channel SOI MOSFETs
Rotondaro, A.L.P., Magnusson, U., Simoen, E., Claeys, C., Colinge, J-P.
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
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Journal Article
Conference Proceeding
CMOS metal replacement gate transistors using tantalum pentoxide gate insulator
Chatterjee, A., Chapman, R.A., Joyner, K., Otobe, M., Hattangady, S., Bevan, M., Brown, G.A., Yang, H., He, Q., Rogers, D., Fang, S.J., Kraft, R., Rotondaro, A.L.P., Terry, M., Brennan, K., Aur, S.-W., Hu, J.C., Tsai, H.-L., Jones, P., Wilk, G., Aoki, M., Rodder, M., Chen, I.-C.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding
Ultraclean Technologies: Light Point Defects, Surface Roughness And Metal Contamination
Heyns, M.M., Mertens, P.W., Meuris, M., Verhaverbekex, S., Schmidt, H.F., Rotondaro, A.L.P., Graf, D.
Published in International Symposium on Semiconductor Manufacturing (1993)
Published in International Symposium on Semiconductor Manufacturing (1993)
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Conference Proceeding
Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness
Shanware, A., McPherson, J., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Colombo, L.
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
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Conference Proceeding
Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation
Nicollian, P.E., Baldwin, G.C., Eason, K.N., Grider, D.T., Hattangady, S.V., Hu, J.C., Hunter, W.R., Rodder, M., Rotondaro, A.L.P.
Published in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) (2000)
Published in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) (2000)
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Conference Proceeding
A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide
Yang, H., Brown, G.A., Hu, J.C., Lu, J.P., Kraft, R., Rotondaro, A.L.P., Hattangady, S.V., Chen, I.-C., Luttmer, J.D., Chapman, R.A., Chen, P.J., Tsai, H.L., Amirhekmat, B., Magel, L.K.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond
Hu, J.C., Yang, H., Kraft, R., Rotondaro, A.L.P., Hattangady, S., Lee, W.W., Chapman, R.A., Chao, C.-P., Chatterjee, A., Hanratty, M., Rodder, M., Chen, I.-C.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding