Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
Geelhaar, L., Chèze, C., Jenichen, B., Brandt, O., Pfüller, C., Münch, S., Rothemund, R., Reitzenstein, S., Forchel, A., Kehagias, T., Komninou, P., Dimitrakopulos, G. P., Karakostas, T., Lari, L., Chalker, P. R., Gass, M. H., Riechert, H.
Published in IEEE journal of selected topics in quantum electronics (01.07.2011)
Published in IEEE journal of selected topics in quantum electronics (01.07.2011)
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Journal Article
BAW Filters for 5G Bands
Aigner, R., Fattinger, G., Schaefer, M., Karnati, K., Rothemund, R., Dumont, F.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
DE3501848
FRITZSCHE, CHRISTIAN. DR., 7800 FREIBURG, DE, ROTHEMUND, WOLFRAM. DR., 7803 GUNDELFINGEN, DE
Year of Publication 25.01.1990
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Year of Publication 25.01.1990
Patent