An Experimental Demonstration of GaN CMOS Technology
Rongming Chu, Yu Cao, Chen, Mary, Ray Li, Zehnder, Daniel
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Rongming Chu, Corrion, A, Chen, M, Ray Li, Wong, D, Zehnder, D, Hughes, B, Boutros, K
Published in IEEE electron device letters (01.05.2011)
Published in IEEE electron device letters (01.05.2011)
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Journal Article
Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers
Hontz, Michael R., Yu Cao, Chen, Mary, Ray Li, Garrido, Austin, Rongming Chu, Khanna, Raghav
Published in IEEE transactions on electron devices (01.05.2017)
Published in IEEE transactions on electron devices (01.05.2017)
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Journal Article
AlGaN-GaN double-channel HEMTs
Rongming Chu, Yugang Zhou, Jie Liu, Deliang Wang, Chen, K.J., Lau, K.M.
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation
Rongming Chu, Zhen Chen, DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.11.2008)
Published in IEEE electron device letters (01.11.2008)
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Journal Article
Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts
Rongming Chu, Likun Shen, Fichtenbaum, N., Brown, D., Keller, S., Mishra, U.K.
Published in IEEE electron device letters (01.04.2008)
Published in IEEE electron device letters (01.04.2008)
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Journal Article
High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates
BROWN, David F, SHINOHARA, Keisuke, SANTOS, Dayward, BURNHAM, Shawn D, ROBINSON, John F, ZEHNDER, Daniel, JUNGJIN KIM, Samuel, OH, Thomas C, MICOVIC, Miroslav, CORRION, Andrea L, RONGMING CHU, WILLIAMS, Adam, WONG, Joel C, ALVARADO-RODRIGUEZ, Ivan, GRABAR, Robert, JOHNSON, Michael, BUTLER, Colleen M
Published in IEEE electron device letters (2013)
Published in IEEE electron device letters (2013)
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Journal Article
Recent advances in GaN power electronics
Boutros, Karim, Rongming Chu, Hughes, Brian
Published in Proceedings of the IEEE 2013 Custom Integrated Circuits Conference (01.09.2013)
Published in Proceedings of the IEEE 2013 Custom Integrated Circuits Conference (01.09.2013)
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Conference Proceeding
Impact of CF4 plasma treatment on GaN
RONGMING CHU, CHANG SOO SUH, MAN HOI WONG, FICHTENBAUM, Nicholas, BROWN, David, MCCARTHY, Lee, KELLER, Stacia, FENG WU, SPECK, James S, MISHRA, Umesh K
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
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Journal Article
N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier
Man Hoi Wong, Yi Pei, Rongming Chu, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article
V-Gate GaN HEMTs for X-Band Power Applications
Rongming Chu, Likun Shen, Fichtenbaum, N., Brown, D., Zhen Chen, Keller, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate
Zijian Li, Rongming Chu, Zehnder, Daniel, Khalil, Sameh, Chen, Mary, Xu Chen, Boutros, Karim
Published in 72nd Device Research Conference (01.06.2014)
Published in 72nd Device Research Conference (01.06.2014)
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Conference Proceeding
Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt
Rongming Chu, Hughes, Brian, Chen, Mary, Brown, David, Li, Ray, Khalil, Sameh, Zehnder, Daniel, Chen, Steve, Williams, Adam, Garrido, Austin, Musni, Marcel, Boutros, Karim
Published in 71st Device Research Conference (01.06.2013)
Published in 71st Device Research Conference (01.06.2013)
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Conference Proceeding
High performance GaN-on-Si power switch: Role of substrate bias in device characteristics
Rongming Chu, Zehnder, D., Hughes, B., Boutros, K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
AlGaN/GaN HEMT With a Transparent Gate Electrode
Yi Pei, Vampola, K.J., Zhen Chen, Rongming Chu, DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications
Rongming Chu, Zhen Chen, Yi Pei, Newman, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.09.2009)
Published in IEEE electron device letters (01.09.2009)
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Journal Article