Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices
Kim, Wonjoo, Menzel, Stephan, Wouters, Dirk J, Guo, Yuzheng, Robertson, John, Roesgen, Bernd, Waser, Rainer, Rana, Vikas
Published in Nanoscale (07.11.2016)
Published in Nanoscale (07.11.2016)
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Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
Marchewka, Astrid, Roesgen, Bernd, Skaja, Katharina, Du, Hongchu, Jia, Chun-Lin, Mayer, Joachim, Rana, Vikas, Waser, Rainer, Menzel, Stephan
Published in Advanced electronic materials (01.01.2016)
Published in Advanced electronic materials (01.01.2016)
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Journal Article
Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices
Breuer, Thomas, Nielen, Lutz, Roesgen, Bernd, Waser, Rainer, Rana, Vikas, Linn, Eike
Published in Scientific reports (05.04.2016)
Published in Scientific reports (05.04.2016)
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Journal Article
Current Compliance-Dependent Nonlinearity in TiO2 ReRAM
LENTZ, Florian, ROESGEN, Bernd, RANA, Vikas, WOUTERS, Dirk J, WASER, Rainer
Published in IEEE electron device letters (01.08.2013)
Published in IEEE electron device letters (01.08.2013)
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Journal Article
Nonlinearity analysis of TaOX redox-based RRAM
Kim, Wonjoo, Rösgen, Bernd, Breuer, Thomas, Menzel, Stephan, Wouters, Dirk, Waser, Rainer, Rana, Vikas
Published in Microelectronic engineering (25.03.2016)
Published in Microelectronic engineering (25.03.2016)
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Journal Article
Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5 -based ReRAM devices
Kim, Wonjoo, Menzel, Stephan, Wouters, Dirk J, Guo, Yuzheng, Robertson, John, Roesgen, Bernd, Waser, Rainer, Rana, Vikas
Published in Nanoscale (20.10.2016)
Published in Nanoscale (20.10.2016)
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Journal Article
Current Compliance-Dependent Nonlinearity in ReRAM
Lentz, Florian, Roesgen, Bernd, Rana, Vikas, Wouters, Dirk J., Waser, Rainer
Published in IEEE electron device letters (01.08.2013)
Published in IEEE electron device letters (01.08.2013)
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Journal Article
Competing strain relaxation mechanisms in epitaxially grown Pr0.48Ca0.52MnO3 on SrTiO3
Herpers, Anja, O’Shea, Kerry J., MacLaren, Donald A., Noyong, Michael, Rösgen, Bernd, Simon, Ulrich, Dittmann, Regina
Published in APL materials (01.10.2014)
Published in APL materials (01.10.2014)
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Journal Article
Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)
Marchewka, Astrid, Roesgen, Bernd, Skaja, Katharina, Du, Hongchu, Jia, Chun-Lin, Mayer, Joachim, Rana, Vikas, Waser, Rainer, Menzel, Stephan
Published in Advanced electronic materials (01.01.2016)
Published in Advanced electronic materials (01.01.2016)
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