Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm
Ristic, Goran S., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Jakšić, Aleksandar B.
Published in Sensors and materials (16.06.2021)
Published in Sensors and materials (16.06.2021)
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Fading of pMOS dosimeters over a long period of time
Ristić, Goran S., Andjelković, Marko S., Duane, Russell, Jakšić, Aleksandar B.
Published in Micro & nano letters (01.06.2022)
Published in Micro & nano letters (01.06.2022)
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Using RADFET for the real-time measurement of gamma radiation dose rate
Andjelkovi, Marko S, Risti, Goran S, Jakši, Aleksandar B
Published in Measurement science & technology (01.02.2015)
Published in Measurement science & technology (01.02.2015)
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Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
Ristić, Goran S., Ilić, Stefan D., Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Andjelković, Marko S.
Published in Electronics (Basel) (01.03.2022)
Published in Electronics (Basel) (01.03.2022)
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Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow
PEJOVIC, Momcilo M, RISTIC, Goran S, MILOSAVLJEVIC, Cedomir S, PEJOVIC, Milic M
Published in Journal of physics. D, Applied physics (21.10.2002)
Published in Journal of physics. D, Applied physics (21.10.2002)
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Electrical breakdown in low pressure gases
Pejovic, Momcilo M, Ristic, Goran S, Karamarkovic, Jugoslav P
Published in Journal of physics. D, Applied physics (21.05.2002)
Published in Journal of physics. D, Applied physics (21.05.2002)
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Recharging process of commercial floating-gate MOS transistor in dosimetry application
Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran S.
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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