β-Gallium oxide power electronics
Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka
Published in APL materials (01.02.2022)
Published in APL materials (01.02.2022)
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Journal Article
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Lee, Hyunsoo, Karim, Md Rezaul, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
Published in Journal of applied physics (07.06.2020)
Published in Journal of applied physics (07.06.2020)
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Journal Article
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3
Johnson, Jared M, Chen, Zhen, Varley, Joel B, Jackson, Christine M, Esmat Farzana, Zhang, Zeng, Arehart, Aaron R, Hsien-Lien Huang, Genc, Arda, Ringel, Steven A, Chris G. Van de Walle, Muller, David A, Hwang, Jinwoo
Published in Physical review. X (06.11.2019)
Published in Physical review. X (06.11.2019)
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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
Kalarickal, Nidhin Kurian, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Xia, Zhanbo, Moore, Wyatt, McGlone, Joe F., Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
Published in IEEE transactions on electron devices (01.01.2021)
Published in IEEE transactions on electron devices (01.01.2021)
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Journal Article
Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping
Published in Physica status solidi. A, Applications and materials science (01.03.2021)
Published in Physica status solidi. A, Applications and materials science (01.03.2021)
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Journal Article
Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
Sun, Wenyuan, Joh, Jungwoo, Krishnan, Srikanth, Pendharkar, Sameer, Jackson, Christine M., Ringel, Steven A., Arehart, Aaron R.
Published in IEEE transactions on electron devices (01.02.2019)
Published in IEEE transactions on electron devices (01.02.2019)
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Journal Article
Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations
Lepkowski, Daniel L., Grassman, Tyler J., Boyer, Jacob T., Chmielewski, Daniel J., Yi, Chuqi, Juhl, Mattias K., Soeriyadi, Anastasia H., Western, Ned, Mehrvarz, Hamid, Römer, Udo, Ho-Baillie, Anita, Kerestes, Christopher, Derkacs, Daniel, Whipple, Steven G., Stavrides, Alex P., Bremner, Stephen P., Ringel, Steven A.
Published in Solar energy materials and solar cells (15.09.2021)
Published in Solar energy materials and solar cells (15.09.2021)
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Exertional rhabdomyolysis associated with high intensity exercise
Lozowska, Dominika, Liewluck, Teerin, Quan, Dianna, Ringel, Steven P.
Published in Muscle & nerve (01.12.2015)
Published in Muscle & nerve (01.12.2015)
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Journal Article
Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
Grassman, T J, Brenner, M R, Gonzalez, M, Carlin, A M, Unocic, R R, Dehoff, R R, Mills, M J, Ringel, S A
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Journal Article
Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies
Farzana, Esmat, Foronda, Humberto M., Jackson, Christine M., Razzak, Towhidur, Zhang, Zeng, Speck, James S., Arehart, Aaron R., Ringel, Steven A.
Published in Journal of applied physics (14.10.2018)
Published in Journal of applied physics (14.10.2018)
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Journal Article
Breakdown Characteristics of \beta -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
Joishi, Chandan, Zhang, Yuewei, Xia, Zhanbo, Sun, Wenyuan, Arehart, Aaron R., Ringel, Steven, Lodha, Saurabh, Rajan, Siddharth
Published in IEEE electron device letters (01.08.2019)
Published in IEEE electron device letters (01.08.2019)
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Journal Article
Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3
Farzana, Esmat, Chaiken, Max F., Blue, Thomas E., Arehart, Aaron R., Ringel, Steven A.
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Journal Article
In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells
Karki, Shankar, Paul, Pran K., Rajan, Grace, Ashrafee, Tasnuva, Aryal, Krishna, Pradhan, Puja, Collins, Robert Warren, Rockett, Angus, Grassman, Tyler J., Ringel, Steven A., Arehart, Aaron R., Marsillac, Sylvain
Published in IEEE journal of photovoltaics (01.03.2017)
Published in IEEE journal of photovoltaics (01.03.2017)
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