Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.
Published in Solid-state electronics (01.02.2013)
Published in Solid-state electronics (01.02.2013)
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Journal Article
Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN
Hierro, A., Hansen, M., Zhao, L., Speck, J.S., Mishra, U.K., DenBaars, S.P., Ringel, S.A.
Published in physica status solidi (b) (01.12.2001)
Published in physica status solidi (b) (01.12.2001)
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Journal Article
High-performance, metamorphic InxGa1-xAs tunnel diodes grown by molecular beam epitaxy
Kwon, O., Jazwiecki, M.M., Sacks, R.N., Ringel, S.A.
Published in IEEE electron device letters (01.10.2003)
Published in IEEE electron device letters (01.10.2003)
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Journal Article
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.
Published in Solid-state electronics (01.02.2013)
Published in Solid-state electronics (01.02.2013)
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Journal Article
Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN
Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.
Published in Microelectronics and reliability (01.01.2016)
Published in Microelectronics and reliability (01.01.2016)
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Journal Article
Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps
Sasikumar, A., Arehart, A.R., Via, G.D., Winningham, B., Poling, B., Heller, E., Ringel, S.A.
Published in Microelectronics and reliability (01.11.2015)
Published in Microelectronics and reliability (01.11.2015)
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Journal Article
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell
Tan, K.H., Wicaksono, S., Loke, W.K., Li, D., Yoon, S.F., Fitzgerald, E.A., Ringel, S.A., Harris Jr, J.S.
Published in Journal of crystal growth (15.11.2011)
Published in Journal of crystal growth (15.11.2011)
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Journal Article
Impact of annealing and V:III ratio on properties of MBE grown wide-bandgap AlGaInP materials and solar cells
Lueck, M., Gonzalez, M., Ojin Kwon, Andre, C., Ringel, S.A.
Published in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (2005)
Published in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (2005)
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Conference Proceeding
Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN
Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.
Published in Microelectronics and reliability (01.01.2016)
Published in Microelectronics and reliability (01.01.2016)
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Journal Article
Photonics laboratory with emphasis on technical diversity
Anderson, B.L., Pelz, L.J., Ringel, S.A., Clymer, B.D., Collins, S.A.
Published in IEEE transactions on education (01.08.1998)
Published in IEEE transactions on education (01.08.1998)
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Journal Article
Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs
Sasikumar, A., Arehart, A.R., Cardwell, D.W., Jackson, C.M., Sun, W., Zhang, Z., Ringel, S.A.
Published in Microelectronics and reliability (01.01.2016)
Published in Microelectronics and reliability (01.01.2016)
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Journal Article
Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell
Tan, K.H., Wicaksono, S., Loke, W.K., Li, D., Yoon, S.F., Fitzgerald, E.A., Ringel, S.A., Harris Jr, J.S.
Published in Journal of crystal growth (01.11.2011)
Published in Journal of crystal growth (01.11.2011)
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Journal Article
Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates
ANDRE, Carrie L, CARLIN, John A, BOECKL, John J, WILT, David M, SMITH, M. A, PITERA, A. J, LEE, M. L, FITZGERALD, Eugene A, RINGEL, Steven A
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article