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SYSTEMS AND METHODS OF FORMING A REDUCED CAPACITANCE DEVICE

SYSTEMS AND METHODS OF FORMING A REDUCED CAPACITANCE DEVICE

by YEAP CHOH FEI, RIM KERN, ZHU JOHN JIANHONG, XU JEFFREY JUNHAO, SONG STANLEY SEUNGCHUL
Year of Publication 17.09.2015

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Patent

SYSTEMS AND METHODS OF FORMING INTERCONNECTS WITH REDUCED CAPACITIVE COUPLING

SYSTEMS AND METHODS OF FORMING INTERCONNECTS WITH REDUCED CAPACITIVE COUPLING

by XU, JEFFREY JUNHAO, YEAP, CHOH FEI, RIM, KERN, SONG, STANLEY SEUNGCHUL, ZHU, JOHN JIANHONG
Year of Publication 17.09.2015

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Patent

STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION CAPACITANCE AND LOW LEAKAGE

STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION CAPACITANCE AND LOW LEAKAGE

by RIM KERN, REZNICEK ALEXANDER, DORIS BRUCE B, CHENG KANGGUO, KHAKIFIROOZ ALI, LU DARSEN D
Year of Publication 10.09.2015

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Patent

MOSFET structure with multiple self-aligned silicide contacts

MOSFET structure with multiple self-aligned silicide contacts

by Chan, Kevin K, Lavoie, Christian, Rim, Kern
Year of Publication 15.02.2011

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Patent

MOSFET structure with multiple self-aligned silicide contacts

MOSFET structure with multiple self-aligned silicide contacts

by RIM KERN, CHAN KEVIN K, LAVOIE CHRISTIAN
Year of Publication 15.02.2011

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Patent

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

by RIM KERN, DORIS BRUCE B, CHENG KANGGUO, KHAKIFIROOZ ALI, LU DARSEN D
Year of Publication 27.08.2015

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Patent

Methods of forming isolated germanium-containing fins for a FinFET semiconductor device

Methods of forming isolated germanium-containing fins for a FinFET semiconductor device

by JACOB AJEY POOVANNUMMOOTTIL, FRONHEISER JODY A, RIM KERN, CHENG KANGGUO, AKARVARDAR MURAT KEREM, DORIS BRUCE
Year of Publication 25.08.2015

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Patent

CMOS structure including differential channel stressing layer compositions

CMOS structure including differential channel stressing layer compositions

by RIM KERN, DONATON RICARDO A, YAOCHENG LIU
Year of Publication 25.01.2011

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Patent

CMOS structure including differential channel stressing layer compositions

CMOS structure including differential channel stressing layer compositions

by Yaocheng, Liu, Donaton, Ricardo A, Rim, Kern
Year of Publication 25.01.2011

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Patent

Method and structure for pFET junction profile with SiGe channel

by WILLIAM K HENSON, KERN RIM, XINLIN WANG, YUE LIANG
Year of Publication 29.05.2013

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Patent

STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL ISOLATION

STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL ISOLATION

by HO HERBERT L, RIM KERN, KANAKASABAPATHY SIVANANDA K, KRISHNAN RISHIKESH
Year of Publication 30.07.2015

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Patent

Method and structure for forming a localized SOI finFET

Method and structure for forming a localized SOI finFET

by ALI KHAKIFIROOZ, BRUCE B DORIS, KERN RIM, KANGGUO CHENG, VEERARAGHAVAN S BASKER
Year of Publication 29.07.2015

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Patent

Dielectric filler fins for planar topography in gate level

Dielectric filler fins for planar topography in gate level

by NOWAK EDWARD J, RIM KERN, DORIS BRUCE B, DIVAKARUNI RAMACHANDRA, CHENG KANGGUO, KHAKIFIROOZ ALI
Year of Publication 28.07.2015

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Patent

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

by Kang Donghun, Chudzik Michael P, Narayanan Vijay, Cartier Eduard A, Krishnan Rishikesh, Ando Takashi, Rim Kern, Dasgupta Aritra, Ho Herbert L
Year of Publication 31.08.2017

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Patent

Dummy gate structure for electrical isolation of a fin DRAM

Dummy gate structure for electrical isolation of a fin DRAM

by Tian Kehan, Vega Reinaldo A, Doris Bruce B, Cheng Kangguo, Khan Babar A, Barth, Jr. John E, Rim Kern, Ho Herbert L, Khakifirooz Ali, Ponoth Shom
Year of Publication 22.08.2017

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Patent

METHODS OF FORMING ISOLATED GERMANIUM-CONTAINING FINS FOR A FINFET SEMICONDUCTOR DEVICE

METHODS OF FORMING ISOLATED GERMANIUM-CONTAINING FINS FOR A FINFET SEMICONDUCTOR DEVICE

by JACOB AJEY POOVANNUMMOOTTIL, FRONHEISER JODY A, RIM KERN, CHENG KANGGUO, AKARVARDAR MURAT KEREM, DORIS BRUCE
Year of Publication 16.07.2015

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Patent

SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION

SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION

by YEAP CHOH FEI, RIM KERN, XU JEFFREY JUNHAO, MACHKAOUTSAN VLADIMIR, SONG STANLEY SEUNGCHUL
Year of Publication 09.07.2015

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Patent

SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION

SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION

by XU, JEFFREY JUNHAO, YEAP, CHOH FEI, MACHKAOUTSAN, VLADIMIR, RIM, KERN, SONG, STANLEY SEUNGCHUL
Year of Publication 09.07.2015

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Patent

Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits

Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits

by KANG, SEUNG HYUK, BOYNAPALLI, VENUGOPAL, SHARMA, DEEPAK, CHAVA, BHARANI, NALLAPATI, GIRIDHAR, FENG, PEI-JIE, LIM, HYEOK-JIN, RIM, KERN, SONG, STANLEY SEUNGCHUL, CHIDAMBARAM, PERIANNAN, KIM, JONGHAE, VANG, FOUA
Year of Publication 01.08.2022

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Patent

Method and structure for forming a localized soi finfet

Method and structure for forming a localized soi finfet

by RIM KERN, DORIS BRUCE B, CHENG KANGGUO, KHAKIFIROOZ ALI, BASKER VEERARAGHAVAN S
Year of Publication 08.07.2015

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Patent

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