Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface
Jung, Helmut, Behtash, Reza, Thorpe, James R., Riepe, Klaus, Bourgeois, Franck, Blanck, Hervé, Chuvilin, Andrey, Kaiser, Ute
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Baeumler, Martina, Gütle, Frank, Polyakov, Vladimir, Cäsar, Markus, Dammann, Michael, Konstanzer, Helmer, Pletschen, Wilfried, Bronner, Wolfgang, Quay, Rüdiger, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver, Bourgeois, Franck, Behtash, Reza, Riepe, Klaus J., van der Wel, Paul J., Klappe, Jos, Rödle, Thomas
Published in Journal of electronic materials (01.06.2010)
Published in Journal of electronic materials (01.06.2010)
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Journal Article
A High Efficiency MMIC X-band GaN Power Amplifier
Ayad, Mohammed, Poitrenaud, Nicolas, Serru, Veronique, Camiade, Marc, Gruenenpuett, Jan, Riepe, Klaus J.
Published in 2020 50th European Microwave Conference (EuMC) (12.01.2021)
Published in 2020 50th European Microwave Conference (EuMC) (12.01.2021)
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Conference Proceeding
Industrial GaN FET technology
Blanck, Hervé, Thorpe, James R., Behtash, Reza, Splettstößer, Jörg, Brückner, Peter, Heckmann, Sylvain, Jung, Helmut, Riepe, Klaus, Bourgeois, Franck, Hosch, Michael, Köhn, Dominik, Stieglauer, Hermann, Floriot, Didier, Lambert, Benoît, Favede, Laurent, Ouarch, Zineb, Camiade, Marc
Published in International journal of microwave and wireless technologies (01.02.2010)
Published in International journal of microwave and wireless technologies (01.02.2010)
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Journal Article
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Simon-Najasek, Michel, Poppitz, David, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.07.2020)
Published in IEEE transactions on electron devices (01.07.2020)
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Journal Article
In0.52Al0.48As/InxGa1-xAs (0.53<x<1.0) pseudomorphic high electron mobility transistors with high breakdown voltages : design and performances
DICKMANN, J, RIEPE, K, GEYER, A, MAILE, B. E, SCHURR, A, BERG, M, DAEMBKES, H
Published in Japanese journal of applied physics (1996)
Published in Japanese journal of applied physics (1996)
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Journal Article
Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
BAEUMLER, Martina, GÜTLE, Frank, MIKULLA, Michael, AMBACHER, Oliver, BOURGEOIS, Franck, BEHTASH, Reza, RIEPE, Klaus J, VAN DER WEL, Paul J, KLAPPE, Jos, RÖDLE, Thomas, POLYAKOV, Vladimir, CÄSAR, Markus, DAMMANN, Michael, KONSTANZER, Helmer, PLETSCHEN, Wilfried, BRONNER, Wolfgang, QUAY, Rüdiger, WALTEREIT, Patrick
Published in Journal of electronic materials (2010)
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Published in Journal of electronic materials (2010)
Conference Proceeding
Monolithic upconversion and reference IC for power amplifier linearization using GaAs HBTs
Bingol, C., Hein, H., Gamm, E., Oehler, F., Doser, W., Riepe, K., Blanck, H.
Published in 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) (2000)
Published in 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) (2000)
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Conference Proceeding
Journal Article
Monolithic upconversion and reference IC for power amplifier linearization using GaAs HBTs
Bingol, C., Hein, H., Gammn, E., Oehler, F., Doser, W., Riepe, K., Blanck, H.
Published in 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) (2000)
Published in 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) (2000)
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Conference Proceeding
In 0.52 Al 0.48 As/In x Ga 1-x As (0.53<x<1.0) Pseudomorphic High Electron Mobility Transistors with High Breakdown Voltages: Design and Performances
Dickmann, Jürgen, Riepe, Klaus, Geyer, Arthur, Maile, Bernd E., Schurr, Anton, Daembkes, Michael Berg
Published in Japanese Journal of Applied Physics (01.01.1996)
Published in Japanese Journal of Applied Physics (01.01.1996)
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Journal Article
Breakdown mechanisms in pseudomorphic InAlAs/In(x)Ga(1-x)As high electron mobility transistors on InP. I - Off-state
Dickmann, Juergen, Riepe, Klaus, Maile, Bernd E, Schurr, Anton, Geyer, Arthur, Narozny, Peter, Schildberg, Steffen
Published in Japanese Journal of Applied Physics (01.01.1995)
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Published in Japanese Journal of Applied Physics (01.01.1995)
Journal Article
Breakdown Mechanisms in Pseudomorphic InAlAs/In x Ga 1-x As High Electron Mobility Transistors on InP. II: On-State
Dickmann, Jürgen, Schildberg, Steffen, Riepe, Klaus, Maile, Bernd Ernst, Schurr, Anton, Arthur Geyer, Arthur Geyer, Peter Narozny, Peter Narozny
Published in Japanese Journal of Applied Physics (01.04.1995)
Published in Japanese Journal of Applied Physics (01.04.1995)
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Journal Article
Breakdown Mechanisms in Pseudomorphic InAlAs/In x Ga 1-x As High Electron Mobility Transistors on InP. I: Off-State
Dickmann, Jürgen, Schildberg, Steffen, Riepe, Klaus, Maile, Bernd E., Schurr, Anton, Geyer, Arthur, Peter Narozny, Peter Narozny
Published in Japanese Journal of Applied Physics (01.01.1995)
Published in Japanese Journal of Applied Physics (01.01.1995)
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Journal Article