Process-induced defects in InP caused by chemical vapor deposition of surface passivation dielectrics
HASHIZUME, T, HASEGAWA, H, RIEMENSCHNEIDER, R, HARTNAGEL, H. L
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Conference Proceeding
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Future Trends in IoT
Bacquet, Joël, Riemenschneider, Rolf, Wintlev-Jensen, Peter
Published in Next Generation Internet of Things (2018)
Published in Next Generation Internet of Things (2018)
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Book Chapter
Next Generation IoT Platforms
Bacquet, Joël, Riemenschneider, Rolf
Published in Cognitive Hyperconnected Digital Transformation (2017)
Published in Cognitive Hyperconnected Digital Transformation (2017)
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Book Chapter
III–V Compound semiconductor micromachined actuators for long resonator tunable fabry-pérot detectors
Dehé, A., Peerlings, J., Pfeiffer, J., Riemenschneider, R., Vogt, A., Streubel, K., Künzel, H., Meissner, P., Hartnagel, H.L.
Published in Sensors and actuators. A, Physical (15.06.1998)
Published in Sensors and actuators. A, Physical (15.06.1998)
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Journal Article
Conference Proceeding
Electrochemically fabricated high-barrier Schottky contacts on n-InP and their application for metal-semiconductor-metal photodetectors
DUMKA, D. C, RIEMENSCHNEIDER, R, MIAO, J, HARTNAGEL, H. L, SINGH, B. R
Published in Journal of the Electrochemical Society (01.06.1996)
Published in Journal of the Electrochemical Society (01.06.1996)
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Journal Article