Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
Chandrasekar, Hareesh, Razzak, Towhidur, Wang, Caiyu, Reyes, Zeltzin, Majumdar, Kausik, Rajan, Siddharth
Published in Advanced electronic materials (01.08.2020)
Published in Advanced electronic materials (01.08.2020)
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