High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel
Mikhaylov, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Reshanov, S. A., Schöner, A.
Published in Semiconductors (Woodbury, N.Y.) (2020)
Published in Semiconductors (Woodbury, N.Y.) (2020)
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Journal Article
Identification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide
Reshanov, S. A., Pensl, G., Nagasawa, H., Schöner, A.
Published in Journal of applied physics (15.06.2006)
Published in Journal of applied physics (15.06.2006)
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Journal Article
High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC
Schöner, Adolf, Ivanov, Boris V., Sergushichev, K.A., Luchinin, Victor V., Afanasyev, Alexey V., Reshanov, Sergey A., Ilyin, Vladimir A., Smirnov, A.A., Kardo-Sysoev, Alexey F.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes
Schöner, Adolf, Ivanov, Boris V., Afanasyev, Alexey V., Kardo-Sysoev, Alexey F., Ilyin, Vladimir A., Reshanov, Sergey A., Smirnov, A.A., Luchinin, Victor V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
Zhang, A., Jung, T.A., Gysin, Urs, Meyer, Ernst, Bartolf, Holger, ROSSMANN, Harald, Schöner, Adolf, Bubendorf, Alexander, Reshanov, Sergey A., Glatzel, Thilo
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Afanasyev, Alexey V., Alfieri, Giovanni, Mikhaylov, Aleksey I., Reshanov, Sergey A., Luchinin, Victor V., Bartolf, Holger
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
Schöner, Adolf, Zhang, A.Z., Bakowski, Mietek, Lim, Jang Kwon, Kwietniewski, Norbert, Kaplan, Wlodek, Reshanov, Sergey A.
Published in Materials Science Forum (30.06.2015)
Published in Materials Science Forum (30.06.2015)
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Journal Article
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
Knoll, Lars, Minamisawa, Renato Amaral, Bartolf, Holger, Mikhaylov, A.I., Schöner, Adolf, Alfieri, Giovanni, Luchinin, V.V., Reshanov, Sergey A., Afanasyev, Alexey V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
Schöner, Adolf, Minamisawa, Renato Amaral, Bartolf, Holger, Alfieri, Giovanni, Afanasyev, Alexey V., Mikhaylov, A.I., Knoll, Lars, Reshanov, Sergey A., Luchinin, Victor V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
Mikhaylov, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Sledziewski, T., Reshanov, S. A., Schöner, A., Krieger, M.
Published in Semiconductors (Woodbury, N.Y.) (2016)
Published in Semiconductors (Woodbury, N.Y.) (2016)
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Journal Article
Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy
Reshanov, S. A., Pensl, G., Danno, K., Kimoto, T., Hishiki, S., Ohshima, T., Itoh, H., Yan, Fei, Devaty, R. P., Choyke, W. J.
Published in Journal of applied physics (01.12.2007)
Published in Journal of applied physics (01.12.2007)
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Journal Article
High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
Zippelius, B., Beljakowa, S., Krieger, M., Pensl, G., Reshanov, S. A., Noborio, M., Kimoto, T., Afanas'ev, V. V.
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
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Journal Article
Group III–V impurities in β-SiC: lattice distortions and solubility
Reshanov, S.A., Parfenova, I.I., Rastegaev, V.P.
Published in Diamond and related materials (01.03.2001)
Published in Diamond and related materials (01.03.2001)
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Journal Article
Electrical and optical properties of erbium-related centers in 6H silicon carbide
Klettke, O, Reshanov, S.A, Pensl, G, Shishkin, Y, Devaty, R.P, Choyke, W.J
Published in Physica. B, Condensed matter (01.12.2001)
Published in Physica. B, Condensed matter (01.12.2001)
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Journal Article
Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates
El-Shaer, A., Bakin, A., Schlenker, E., Mofor, A.C., Wagner, G., Reshanov, S.A., Waag, A.
Published in Superlattices and microstructures (01.07.2007)
Published in Superlattices and microstructures (01.07.2007)
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Journal Article
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Ghandi, R, Buono, B, Domeij, M, Esteve, R, Schöner, A, Jisheng Han, Dimitrijev, S, Reshanov, S A, Zetterling, C-M, Östling, M
Published in IEEE transactions on electron devices (01.01.2011)
Published in IEEE transactions on electron devices (01.01.2011)
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Journal Article