Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs
Jiangwei Cui, Qiwen Zheng, Bingxu Ning, Xuefeng Yu, Kai Zhao, Ying Wei, Wu Lu, Chengfa He, Diyuan Ren, Fang Yu, Liewei Xu, Qi Guo
Published in 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) (01.07.2018)
Published in 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) (01.07.2018)
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Conference Proceeding
Total dose ionizing irradiation effects on a static random access memory field programmable gate array
Gao, Bo, Yu, Xuefeng, Ren, Diyuan, Li, Yudong, Sun, Jing, Cui, Jiangwei, Wang, Yiyuan, Li, Ming
Published in Journal of semiconductors (01.03.2012)
Published in Journal of semiconductors (01.03.2012)
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Journal Article
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
Zheng, Qiwen, Cui, Jiangwei, Xu, Liewei, Ning, Bingxu, Zhao, Kai, Shen, Mingjie, Yu, Xuefeng, Lu, Wu, He, Chengfa, Ren, Diyuan, Guo, Qi
Published in IEEE transactions on nuclear science (01.04.2019)
Published in IEEE transactions on nuclear science (01.04.2019)
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Journal Article
A new accelerated method for evaluating the ELDRS of bipolar operational amplifiers: Temperature switching approach
Zheng Yuzhan, Lu Wu, Ren Diyuan, Guo Qi
Published in 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2013)
Published in 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2013)
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Conference Proceeding
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose
Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Lu, Wu, He, Chengfa, Ma, Teng, Zhao, Jinghao, Ren, Diyuan, Guo, Qi
Published in IEEE transactions on nuclear science (01.02.2018)
Published in IEEE transactions on nuclear science (01.02.2018)
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Journal Article
Use of temperature-switching approach to evaluate the ELDRS of bipolar devices
Li Xiaolong, Lu Wu, Ma Wuying, Wang Xin, Zheng Yuzhan, Ren Diyuan, Guo Qi, Chengfa, H. E., Yu Xuefeng, Aierken, Li Yudong
Published in 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2016)
Published in 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2016)
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Conference Proceeding
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
Zheng, Qiwen, Cui, Jiangwei, Lu, Wu, Guo, Hongxia, Liu, Jie, Yu, Xuefeng, Wang, Liang, Liu, Jiaqi, He, Chengfa, Ren, Diyuan, Yue, Suge, Zhao, Yuanfu, Guo, Qi
Published in IEEE transactions on nuclear science (01.06.2019)
Published in IEEE transactions on nuclear science (01.06.2019)
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Journal Article
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
Zheng, Qi-Wen, Cui, Jiang-Wei, Wei, Ying, Yu, Xue-Feng, Lu, Wu, Ren, Diyuan, Guo, Qi
Published in Chinese physics letters (01.04.2018)
Published in Chinese physics letters (01.04.2018)
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Journal Article
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs
Zheng, Qi-Wen, Cui, Jiang-Wei, Wei, Ying, Yu, Xue-Feng, Lu, Wu, Ren, Diyuan, Guo, Qi
Published in Chinese physics letters (01.04.2018)
Published in Chinese physics letters (01.04.2018)
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Journal Article
Method and device for determining total dose effect defect model
GUO HONGXIA, REN DIYUAN, FU JUN, ZHANG JINXIN, FENG JUAN, PAN XIAOYU, WANG HUI, WANG YUDONG
Year of Publication 07.04.2020
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Year of Publication 07.04.2020
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