Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
Zheng, Qi-Wen, Cui, Jiang-Wei, Yu, Xue-Feng, Guo, Qi, Zhou, Hang, Ren, Di-Yuan
Published in Chinese physics letters (01.12.2014)
Published in Chinese physics letters (01.12.2014)
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Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors
Lu, Wu (妩陆), Zheng, Yu-Zhan (玉展 郑), Wang, Yi-Yuan (义元 王), Ren, Di-Yuan (迪远 任), Guo, Qi (旗郭), Wang, Zhi-Kuan (志宽 王), Wang, Jian-An (健安 王)
Published in Chinese physics C (01.02.2011)
Published in Chinese physics C (01.02.2011)
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A novel technique for predicting ionizing radiation effects of commercial MOS devices
Guo-Qiang, Zhang, Qi, Guo, Erkin, Wu, Lu, Di-Yuan, Ren
Published in Chinese physics (Beijing, China) (01.06.2004)
Published in Chinese physics (Beijing, China) (01.06.2004)
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Reliability in fluorinated CMOS devices
Guo Qiang Zhang, Rong Liang Yan, Di Yuan Ren, Xue Feng Yu, Wu Lu
Published in Microelectronics (01.06.1997)
Published in Microelectronics (01.06.1997)
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自发性高血压大鼠TGFβ1/ Smad7通路与心室纤维化的关系
高修仁, 翟原生, 彭龙云, 何旭瑜, 郭小刚, 朱莺莺
Published in Zhongshan da xue xue bao. Zhongshan daxue xuebao yixue kexue ban = Journal of Sun Yat-sen University. Yi xue ke xue ban (01.01.2008)
Published in Zhongshan da xue xue bao. Zhongshan daxue xuebao yixue kexue ban = Journal of Sun Yat-sen University. Yi xue ke xue ban (01.01.2008)
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