Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
Shmagin, V.B., Lyutov, A.V., Remizov, D.Yu, Kudryavtsev, K.E., Stepikhova, M.V., Krasilnik, Z.F.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.01.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.01.2008)
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Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
Kuznetsov, V. P., Remizov, D. Yu, Shabanov, V. N., Rubtsova, R. A., Stepikhova, M. V., Kryzhov, D. I., Shushunov, A. N., Belova, O. V., Krasil’nik, Z. F., Maksimov, G. A.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2006)
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Journal Article
Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures
Kuznetsov, V. P., Remizov, D. Yu, Shmagin, V. B., Kudryavtsev, K. E., Shabanov, V. N., Obolensky, S. V., Belova, O. V., Kuznetsov, M. V., Kornaukhov, A. V., Andreev, B. A., Krasil’nik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2007)
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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
Shmagin, V.B, Kuznetsov, V.P, Remizov, D.Yu, Krasil’nik, Z.F, Krasil’nikova, L.V, Kryzhkov, D.I
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2003)
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Journal Article
Electroluminescence at 1.54 {mu}m in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
Kuznetsov, V. P., Remizov, D. Yu, Shabanov, V. N., Rubtsova, R. A., Stepikhova, M. V., Kryzhov, D. I., Shushunov, A. N., Belova, O. V., Krasil'nik, Z. F., Maksimov, G. A.
Published in Semiconductors (Woodbury, N.Y.) (15.07.2006)
Published in Semiconductors (Woodbury, N.Y.) (15.07.2006)
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Journal Article
Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy
Shmagin, V. B., Remizov, D. Yu, Krasil’nik, Z. F., Kuznetsov, V. P., Shabanov, V. N., Krasil’nikova, L. V., Kryzhkov, D. I., Drozdov, M. N.
Published in Physics of the solid state (01.01.2004)
Published in Physics of the solid state (01.01.2004)
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