Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach
Korb, J, Flade, T, Jurisch, M, Köhler, A, Reinhold, Th, Weinert, B
Published in Journal of crystal growth (01.03.1999)
Published in Journal of crystal growth (01.03.1999)
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Journal Article
State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals
Flade, T., Jurisch, M., Kleinwechter, A., Köhler, A., Kretzer, U., Prause, J., Reinhold, Th, Weinert, B.
Published in Journal of crystal growth (01.03.1999)
Published in Journal of crystal growth (01.03.1999)
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Journal Article
Semi-insulating LEC GaAs sub strates with an improved macroscopic and mesoscopic homogeneity
Jurisch, M., Flade, T., Hoffmann, B., Köhler, A., Korb, J., Kretzer, U., Reinhold, Th, Weinert, B.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.02.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.02.1997)
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Journal Article