Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies
Get full text
Journal Article
Conference Proceeding
Passivation issues in active pixel CMOS image sensors
Get full text
Journal Article
Conference Proceeding
Interface studies of silicon nitride dielectric layers
Get full text
Journal Article
Conference Proceeding
Porous silicon: material properties, visible photo- and electroluminescence
Bomchil, G., Halimaoui, A., Sagnes, I., Badoz, P.A., Berbezier, I., Perret, P., Lambert, B., Vincent, G., Garchery, L., Regolini, J.L.
Published in Applied surface science (01.01.1993)
Published in Applied surface science (01.01.1993)
Get full text
Journal Article
Conference Proceeding
Silicon on insulator structures obtained by epitaxial growth of silicon over porous silicon
OULES, C, HALIMAOUI, A, REGOLINI, J. L, PERIO, A, BOMCHIL, G
Published in Journal of the Electrochemical Society (01.12.1992)
Published in Journal of the Electrochemical Society (01.12.1992)
Get full text
Journal Article
Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Martins, J., Regolini, J.L., Dutartre, D., Ribot, P., Lenoble, D., Pantel, R., Monfray, S.
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
Get full text
Journal Article
Growth of Si1-x-yGexCy multi-quantum wells : structural and optical properties
BOUCAUD, P, GUEDJ, C, JULIEN, F. H, FINKMAN, E, BODNAR, S, REGOLINI, J. L
Published in Thin solid films (15.05.1996)
Published in Thin solid films (15.05.1996)
Get full text
Journal Article
Schottky diodes on Si1-x-yGexCy alloys : effect of the C-incorporation
MAMOR, M, MEYER, F, BOUCHIER, D, VIALARET, G, FINKMAN, E, BODNAR, S, REGOLINI, J. L
Published in Applied surface science (01.08.1996)
Published in Applied surface science (01.08.1996)
Get full text
Conference Proceeding
Journal Article
Characterization of semiconducting iron disilicide obtained by LRP/CVD
Regolini, J., Trincat, F., Sagnes, I., Shapira, Y., Bremond, G., Bensahel, D.
Published in IEEE transactions on electron devices (01.01.1992)
Published in IEEE transactions on electron devices (01.01.1992)
Get full text
Journal Article
A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition
GOUY-PAILLER, P, HAOND, M, MATHIOT, D, GAUNEAU, M, PERIO, A, REGOLINI, J. L
Published in Applied surface science (01.11.1993)
Published in Applied surface science (01.11.1993)
Get full text
Conference Proceeding
Journal Article
Structural particularities of carbon-incorporated Si-Ge heterostructures
GUEDJ, C, BOUCHIER, D, BOUCAUD, P, HINCELIN, G, PORTIER, X, L'HOIR, A, BODNAR, S, REGOLINI, J.-L
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1996)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1996)
Get full text
Conference Proceeding
Optical properties of bulk and multi-quantum well SiGe: C heterostructures
Boucaud, P., Guedj, C., Bouchier, D., Julien, F.H., Lourtioz, J.-M., Bodnar, S., Regolini, J.L., Finkman, E.
Published in Journal of crystal growth (01.12.1995)
Published in Journal of crystal growth (01.12.1995)
Get full text
Journal Article
Conference Proceeding
Silicon selective epitaxial growth at reduced pressure and temperature
Regolini, J.L., Bensahel, D., Mercier, J., Scheid, E.
Published in Journal of crystal growth (01.07.1989)
Published in Journal of crystal growth (01.07.1989)
Get full text
Journal Article
Kinetic aspects of selective epitaxial growth using a rapid thermal processing system
Mercier, J., Regolini, J.L., Bensahel, D., Scheid, E.
Published in Journal of crystal growth (01.04.1989)
Published in Journal of crystal growth (01.04.1989)
Get full text
Journal Article