Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum-Hafnium-Chromium-Aluminum Oxide
Lerum, Lance, Fahem, Mohammed, Nayfeh, Osama M., Rees, C. Dave, Simonsen, Kenneth S., Ramirez, Ayax D.
Published in IEEE journal of the Electron Devices Society (01.09.2017)
Published in IEEE journal of the Electron Devices Society (01.09.2017)
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