Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature
Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Journal Article
Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz
Poblenz, C., Corrion, A.L., Recht, F., Chang Soo Suh, Chu, R., Shen, L., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors
Kocan, Martin, Recht, Felix, Umana-Membreno, Gilberto A., Kilburn, Matt R., Nener, Brett D., Mishra, Umesh K., Parish, Giacinta
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF 4 -Treatment
Chu, Rongming, Poblenz, Christiane, Wong, Man Hoi, Dasgupta, Sansaptak, Rajan, Siddharth, Pei, Yi, Recht, Felix, Shen, Likun, Speck, James S., Mishra, Umesh K.
Published in Applied physics express (01.06.2008)
Published in Applied physics express (01.06.2008)
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Journal Article
What’s ahead for industrials?
Jones, Richard, Recht, Felix, Santhanam, Nick, Tong, Xiaoran, Varanasi, Shekhar
Published in McKinsey Insights (17.03.2017)
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Published in McKinsey Insights (17.03.2017)
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