A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic
Hsieh, E Ray, Huang, Yi Xiang, Ye, You Hung, Wang, Zih Ying
Published in Semiconductor science and technology (01.12.2021)
Published in Semiconductor science and technology (01.12.2021)
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Journal Article
RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays
Le, Binh Q., Levy, Akash, Wu, Tony F., Radway, Robert M., Hsieh, E. Ray, Zheng, Xin, Nelson, Mark, Raina, Priyanka, Wong, H.-S. Philip, Wong, Simon, Mitra, Subhasish
Published in IEEE transactions on electron devices (01.09.2021)
Published in IEEE transactions on electron devices (01.09.2021)
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Journal Article
A Nonvolatile Ternary-content-addressable-memory Comprising Resistive-gate Field-effect Transistors
Ray Hsieh, E, Hsueh, Yu Lian, Lin, Rui Qi, Huang, Yi Xiang, Hou, Pei Jun, Chang, Kai Hsiang, Shen, Ting Ho, Li, Yu Hsien, Lyu, Ruei Yang
Published in IEEE electron device letters (01.08.2023)
Published in IEEE electron device letters (01.08.2023)
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Journal Article
A Logic Fully Comparable Single-Supply Capacitor-Less 1-FinFET-1-Source-Channel-Drain-Diode (1T1D) Embedded DRAM MACRO in 16-nm FinFET
Hsieh, E. Ray, Huang, C. F., Huang, S. Y., Miu, M. L., Lu, S. M., Wu, Y. S., Ye, Y. H.
Published in IEEE solid-state circuits letters (2023)
Published in IEEE solid-state circuits letters (2023)
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Journal Article
An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET
Hsieh, E Ray, Jiang, Meng-Ru, Lin, Jian-Li, Chung, Steve S., Chen, Tse Pu, Huang, Shih An, Chen, Tai-Ju, Cheng, Osbert
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model
Hsieh, E Ray, Wang, Zih Ying, Huang, Yi Shiang, Hung, Ting Cun, Lyu, Ruei Yang, Lee, Kuan Yi
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET
Hsieh, E Ray, Luo, Yu Ming, Huang, Yi Xiang, Su, Huan Shiang, Lin, Rui Qi, Lin, Yu-Hsien, Chang, Kai Hsiang, Shen, Ting Ho, Liu, Chuan Hsi
Published in IEEE electron device letters (01.03.2023)
Published in IEEE electron device letters (01.03.2023)
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Journal Article
Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yeh, Hsin-I, Chu, Fu-Yang, Yang, Kai-Chun, Wu, Po-Chun, Hsieh, E-Ray
Published in Surface & coatings technology (15.10.2021)
Published in Surface & coatings technology (15.10.2021)
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Journal Article
A 40-nm Loadless 4T-SRAM TRNG MACRO with Read-just-after-write (RAW) Scheme Featuring 5.3Gb/s and 3.64TOP/W
Wu, Y. S., Chang, K. H., Huang, P. S., Miu, M. L., Huang, S. Y., Lu, S. M., Su, H. S., Hsieh, E Ray
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
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Conference Proceeding
The impact of TiN barrier on the NBTI in an advanced high-k metal-gate p-channel MOSFET
Huang, D.-C, Hsieh, E. Ray, Gong, J., Huang, C.-F, Chung, Steve S.
Published in 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01.07.2017)
Published in 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01.07.2017)
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Conference Proceeding
A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path
Hsieh, E. Ray, Yen Chen Kuo, Chih-Hung Cheng, Jing Ling Kuo, Meng-Ru Jiang, Jian-Li Lin, Hung-Wen Chen, Chung, Steve S., Chuan-Hsi Liu, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Cheng, Osbert
Published in IEEE transactions on electron devices (01.12.2017)
Published in IEEE transactions on electron devices (01.12.2017)
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Journal Article