Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test
Mukherjee, Jayjit, Chaubey, Rupesh Kumar, Rawal, Dipendra S., Dhaka, Rajendra S.
Published in Physica status solidi. A, Applications and materials science (01.11.2022)
Published in Physica status solidi. A, Applications and materials science (01.11.2022)
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Journal Article
Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors
Madhulika, Malik, Amit, Kamboj, Priyanka, Awasthi, Shivansh, Thakur, Priyanka, Jain, Neelu, Mishra, Meena, Kumar, Sanjeev, Rawal, Dipendra S, Singh, Arun K
Published in Semiconductor science and technology (01.03.2021)
Published in Semiconductor science and technology (01.03.2021)
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GaN nanostructures by reactive ion etching: Mask and Maskless approach
Lohani, Jaya, Varshney, Shivani, Rawal, Dipendra S., Sapra, Sameer, Tyagi, Renu
Published in Nano-Structures & Nano-Objects (01.04.2019)
Published in Nano-Structures & Nano-Objects (01.04.2019)
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