Suitability of thin-GaN for AlGaN/GaN HEMT material and device
Narang, Kapil, Singh, Vikash K., Pandey, Akhilesh, Khan, Ruby, Bag, Rajesh K., Rawal, D. S., Padmavati, M. V. G., Tyagi, Renu, Singh, Rajendra
Published in Journal of materials science (01.03.2022)
Published in Journal of materials science (01.03.2022)
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Journal Article
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
Visvkarma, Ajay Kumar, Sharma, Chandan, Laishram, Robert, Kapoor, Sonalee, Rawal, D. S., Vinayak, Seema, Saxena, Manoj
Published in AIP advances (01.12.2019)
Published in AIP advances (01.12.2019)
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Journal Article
On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture
Sehra, Khushwant, Chanchal, Malik, Amit, Kumari, Vandana, Gupta, Mridula, Mishra, Meena, Rawal, D. S., Saxena, Manoj
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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Journal Article
Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs
Sehra, Khushwant, Chanchal, Anand, Anupama, Kumari, Vandana, Reeta, Gupta, Mridula, Mishra, Meena, Rawal, D. S., Saxena, Manoj
Published in IEEE transactions on electron devices (01.05.2023)
Published in IEEE transactions on electron devices (01.05.2023)
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Journal Article
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier
Raut, Samriddhi, Sehra, Khushwant, Mishra, Meena, Rawal, D S, Gupta, Mridula, Saxena, Manoj
Published in Semiconductor science and technology (01.04.2021)
Published in Semiconductor science and technology (01.04.2021)
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Journal Article
Impact of Gamma Radiations on Static, Pulsed I-V, and RF Performance Parameters of AlGaN/GaN HEMT
Visvkarma, Ajay Kumar, Sehra, Khushwant, Chanchal, Laishram, Robert, Malik, Amit, Sharma, Sunil, Kumar, Sudhir, Rawal, D. S., Vinayak, Seema, Saxena, Manoj
Published in IEEE transactions on electron devices (01.05.2022)
Published in IEEE transactions on electron devices (01.05.2022)
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Journal Article
Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications
Sehra, Khushwant, Anand, Anupama, Chanchal, Malik, Amit, Kumari, Vandana, Gupta, Mridula, Mishra, Meena, Rawal, D S, Saxena, Manoj
Published in Journal of physics. D, Applied physics (05.10.2023)
Published in Journal of physics. D, Applied physics (05.10.2023)
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Journal Article
Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs
Visvkarma, Ajay Kumar, Laishram, Robert, Kapoor, Sonalee, Rawal, D S, Vinayak, Seema, Saxena, Manoj
Published in Semiconductor science and technology (01.08.2022)
Published in Semiconductor science and technology (01.08.2022)
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Journal Article
Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
Anand, Anupama, Sehra, Khushwant, Chanchal, Reeta, Narang, Rakhi, Rawal, D. S., Mishra, M., Saxena, Manoj, Gupta, Mridula
Published in Applied physics. A, Materials science & processing (01.08.2023)
Published in Applied physics. A, Materials science & processing (01.08.2023)
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Journal Article
Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sehra, Khushwant, Kumari, Vandana, Gupta, Mridula, Mishra, Meena, Rawal, D. S., Saxena, Manoj
Published in SILICON (2022)
Published in SILICON (2022)
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Journal Article
Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode
Sapra, Kashish, Mazumder, Indrani, Aagiwal, Harshita, Lohani, Kamal, Rawal, D S, Chauhan, Ashok, Singh, Kuldip, Mathew, Manish
Published in Laser physics (01.11.2023)
Published in Laser physics (01.11.2023)
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Journal Article
Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation
Visvkarma, Ajay Kumar, Sharma, Chandan, Saraswat, Chanchal, Rawal, D S, Vinayak, Seema, Saxena, Manoj
Published in Semiconductor science and technology (01.06.2021)
Published in Semiconductor science and technology (01.06.2021)
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Journal Article
hbox/\hbox-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
Rawal, D. S., Malik, H. K., Agarwal, V. R., Kapoor, A. K., Sehgal, B. K., Muralidharan, R.
Published in IEEE transactions on plasma science (01.09.2012)
Published in IEEE transactions on plasma science (01.09.2012)
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Journal Article
Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure
Sapra, Kashish, Mazumder, Indrani, Lohani, Kamal, Rawal, D. S., Chauhan, Ashok, Singh, Kuldip, Mathew, Manish
Published in Optical and quantum electronics (01.03.2024)
Published in Optical and quantum electronics (01.03.2024)
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Journal Article