Search Results - "Ravimaran, S." :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Heterogeneous Weighted Voting-Based Ensemble (HWVE) for Root-Cause Analysis

Heterogeneous Weighted Voting-Based Ensemble (HWVE) for Root-Cause Analysis

by Selvam, Blessy, Ravimaran S, Selvam, Sheba
Published in Journal of information technology research (01.10.2020)

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Journal Article

CCMA—cloud critical metric assessment framework for scientific computing

CCMA—cloud critical metric assessment framework for scientific computing

by Ravindhren, V. G., Ravimaran, S.
Published in Cluster computing (01.09.2019)

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Journal Article

Parallelized root cause analysis using cause-related aspect formulation technique (CRAFT)

Parallelized root cause analysis using cause-related aspect formulation technique (CRAFT)

by Selvam, Blessy, Ravimaran, S., Selvam, Sheba
Published in The Journal of supercomputing (01.09.2019)

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Journal Article

Robust Security With Strong Authentication in Mobile Cloud Computing Based on Trefoil Congruity Framework

Robust Security With Strong Authentication in Mobile Cloud Computing Based on Trefoil Congruity Framework

by Jerald Nirmal Kumar S, Ravimaran S, Sathish A
Published in Journal of organizational and end user computing (01.11.2021)

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Journal Article

Enhancement of the Dynamic Computation-Offloading Service Selection Framework in Mobile Cloud Environment

Enhancement of the Dynamic Computation-Offloading Service Selection Framework in Mobile Cloud Environment

by Nagasundari, S., Ravimaran, S., Uma, G. V.
Published in Wireless personal communications (01.05.2020)

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Journal Article

Internet of Green Things with autonomous wireless wheel robots against green houses and farms

Internet of Green Things with autonomous wireless wheel robots against green houses and farms

by Ram, C Ramasamy Sankar, Ravimaran, S, Krishnan, R Santhana, Julie, E Golden, Robinson, Y Harold, Kumar, Raghvendra, Son, Le Hoang, Thong, Pham Huy, Thanh, Nguyen Quang, Ismail, Mahmoud
Published in International journal of distributed sensor networks (01.06.2020)

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Journal Article

An Effective Non-Commutative Encryption Approach with Optimized Genetic Algorithm for Ensuring Data Protection in Cloud Computing

An Effective Non-Commutative Encryption Approach with Optimized Genetic Algorithm for Ensuring Data Protection in Cloud Computing

by Nirmal Kumar, S. Jerald, Ravimaran, Alam, M. M. Gowthul
Published in Computer modeling in engineering & sciences (01.01.2020)

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Journal Article

A Tool to Extract Name Entity Recognition From Big Data in Banking Sectors

A Tool to Extract Name Entity Recognition From Big Data in Banking Sectors

by Janarish Saju, C, Ravimaran, S
Published in International journal of web services research (01.04.2020)

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Journal Article

Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published in Journal of science. Advanced materials and devices (01.12.2017)

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Journal Article

A Well-Organized Safeguarded Access on Key Propagation by Malleable Optimization in Blend With Double Permutation

A Well-Organized Safeguarded Access on Key Propagation by Malleable Optimization in Blend With Double Permutation

by Sathish, A, Ravimaran, S, Kumar, S Jerald Nirmal
Published in International journal of web services research (01.01.2020)

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Journal Article

LSTM based Soft-Sensor for Estimating Nitrate Concentration in Aquaponics pond

LSTM based Soft-Sensor for Estimating Nitrate Concentration in Aquaponics pond

by Dharshan, A., Kumar, Purushottam, Ravimaran, S., Srinivasulu Reddy, U
Published in 2024 3rd International Conference for Innovation in Technology (INOCON) (01.03.2024)

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Conference Proceeding

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published in International journal of electronics and communications (01.07.2017)

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Journal Article

Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published in Journal of science. Advanced materials and devices (01.12.2017)

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Journal Article

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published in Journal of semiconductors (01.08.2017)

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Journal Article

DC and microwave characteristics of Lg 50nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

DC and microwave characteristics of Lg 50nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published in International journal of electronics and communications (01.07.2017)

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Journal Article

30 nm T-gate enhancement-mode InAIN/AIN/GaN HEMT on SiC substrates for future high power RF applications

30 nm T-gate enhancement-mode InAIN/AIN/GaN HEMT on SiC substrates for future high power RF applications

by P. Murugapandiyan S. Ravimaran J. William
Published in 半导体学报：英文版 (2017)

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Journal Article

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

by Murugapandiyan, P., Ravimaran, S., William, J., Meenakshi Sundaram, K.
Published in Superlattices and microstructures (01.11.2017)

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Journal Article

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J., Ajayan, J., Nirmal, D.
Published in Superlattices and microstructures (01.09.2017)

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Journal Article