Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
Park, Chinsung, Ravindran, Prasanna Venkat, Das, Dipjyoti, Ravikumar, Priyankka Gundlapudi, Zhang, Chengyang, Afroze, Nashrah, Fernandes, Lance, Kuo, Yu Hsin, Hur, Jae, Chen, Hang, Tian, Mengkun, Chern, Winston, Yu, Shimeng, Khan, Asif Islam
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article
Conditions for Domain-Free Negative Capacitance
Ravindran, Prasanna Venkatesan, Ravikumar, Priyankka Gundlapudi, Khan, Asif Islam
Published in IEEE transactions on electron devices (01.08.2023)
Published in IEEE transactions on electron devices (01.08.2023)
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Journal Article
Disturb and its mitigation in Ferroelectric Field-Effect Transistors with Large Memory Window for NAND Flash Applications
Venkatesan, Prasanna, Park, Chinsung, Song, Taeyoung, Fernandes, Lance, Das, Dipjyoti, Afroze, Nashrah, Ravikumar, Priyankka Gundlapudi, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Mahapatra, Souvik, Yu, Shimeng, Datta, Suman, Khan, Asif
Published in IEEE electron device letters (24.09.2024)
Published in IEEE electron device letters (24.09.2024)
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Journal Article
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions
Ravikumar, Priyankka Gundlapudi, Ravindran, Prasanna Venkatesan, Aabrar, Khandker Akif, Song, Taeyoung, Kirtania, Sharadindu Gopal, Das, Dipjyoti, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Yu, Shimeng, Islam, Ahmad Ehtesham, Datta, Suman, Mahapatra, Souvik, Khan, Asif
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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