Dislocation density and strain-relaxation in Ge1−xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy
Khiangte, Krista R., Rathore, Jaswant S., Sharma, Vaibhav, Bhunia, Swagata, Das, Sudipta, Fandan, Rajveer S., Pokharia, Ravinder S., Laha, Apurba, Mahapatra, Suddhasatta
Published in Journal of crystal growth (15.07.2017)
Published in Journal of crystal growth (15.07.2017)
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Journal Article
Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy
Khiangte, Krista R, Rathore, Jaswant S, Schmidt, J, Osten, H J, Laha, A, Mahapatra, S
Published in Journal of physics. D, Applied physics (15.08.2018)
Published in Journal of physics. D, Applied physics (15.08.2018)
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Journal Article
Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory
Rathore, Jaswant S, Fandan, Rajveer, Srivastava, Shalini, Khiangte, Krista R, Das, Sudipta, Ganguly, Udayan, Laha, Apurba, Mahapatra, Suddhasatta
Published in ACS applied electronic materials (24.09.2019)
Published in ACS applied electronic materials (24.09.2019)
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Journal Article
Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy
Khiangte, Krista R., Rathore, Jaswant S., Sharma, Vaibhav, Bhunia, Swagata, Das, Sudipta, Fandan, Rajveer S., Pokharia, Ravinder S., Laha, Apurba, Mahapatra, Suddhasatta
Published in Journal of crystal growth (01.07.2017)
Published in Journal of crystal growth (01.07.2017)
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Journal Article
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
Das, Sudipta, Khiangte, Krista R., Fandan, Rajveer S., Rathore, Jaswant S., Pokharia, Ravindra S., Mahapatra, Suddhasatta, Laha, Apurba
Published in Current applied physics (01.03.2017)
Published in Current applied physics (01.03.2017)
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Journal Article
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Khiangte, Krista R., Rathore, Jaswant S., Sharma, Vaibhav, Laha, Apurba, Mahapatra, Suddhasatta
Published in Solid state communications (01.12.2018)
Published in Solid state communications (01.12.2018)
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Journal Article
Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS
Kothari, Shraddha, Rathore, Jaswant S., Khiangte, Krista R., Mahapatra, Suddhasatta, Lodha, Saurabh
Published in 2018 4th IEEE International Conference on Emerging Electronics (ICEE) (01.12.2018)
Published in 2018 4th IEEE International Conference on Emerging Electronics (ICEE) (01.12.2018)
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Conference Proceeding
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Khiangte, Krista R, Rathore, Jaswant S, Sharma, Vaibhav, Laha, Apurba, Mahapatra, Suddhasatta
Published in arXiv.org (25.07.2018)
Published in arXiv.org (25.07.2018)
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Paper
Journal Article
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Khiangte, Krista R, Rathore, Jaswant S, Schmidt, J, Osten, H J, Laha, A, Mahapatra, S
Published in arXiv.org (27.07.2018)
Published in arXiv.org (27.07.2018)
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Paper
Journal Article
Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures
Khiangte, Krista R, Rathore, Jaswant S, Das, Sudipta, Pokharia, Ravinder S, Schmidt, Jan, Osten, H J, Laha, Apurba, Mahapatra, Suddhasatta
Published in arXiv.org (08.01.2018)
Published in arXiv.org (08.01.2018)
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Paper
Journal Article