Gain switching sub-ns pulse laser diode optimization for time-of-flight laser rangefinding
Golovin, V.S., Slipchenko, S.O., Podoskin, A.A., Rastegaeva, M.G., Pikhtin, N. A.
Published in 2022 International Conference Laser Optics (ICLO) (20.06.2022)
Published in 2022 International Conference Laser Optics (ICLO) (20.06.2022)
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Conference Proceeding
The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
Rastegaeva, M.G., Andreev, A.N., Petrov, A.A., Babanin, A.I., Yagovkina, M.A., Nikitina, I.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
Implementation of energy barrier layers for 1550 nm high-power laser diodes
Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.
Published in Journal of luminescence (01.11.2023)
Published in Journal of luminescence (01.11.2023)
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Journal Article
Surface barrier height in metal-n-6H-SiC structures
Syrkin, A.L., Andreev, A.N., Lebedev, A.A., Rastegaeva, M.G., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Journal Article
Conference Proceeding
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
Veselov, D. A., Shashkin, I. S., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Rastegaeva, M. G., Slipchenko, S. O., Bechvay, E. A., Strelets, V. A., Shamakhov, V. V., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
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Journal Article
Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
Shamakhov, V. V., Nikolaev, D. N., Lyutetskiy, A. V., Bakhvalov, K. V., Rastegaeva, M. G., Slipchenko, S. O., Pikhtin, N. A., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
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Journal Article
Simulation of laser sources based on heterogeneously integrated III-V/SOI structures
Shashkin, I.S., Nikolaev, D.N., Kriychkov, V.A., Rastegaeva, M.G., Slipchenko, S.O., Pikhtin, N.A.
Published in 2024 International Conference Laser Optics (ICLO) (01.07.2024)
Published in 2024 International Conference Laser Optics (ICLO) (01.07.2024)
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Conference Proceeding
Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
Zolotarev, V.V., Leshko, A.Yu, Pikhtin, N.A., Lyutetskiy, A.V., Slipchenko, S.O., Bakhvalov, K.V., Lubyanskiy, Ya.V., Rastegaeva, M.G., Tarasov, I.S.
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2014)
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2014)
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Journal Article
850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Shamakhov, V. V., Bakhvalov, K. V., Vasylyeva, V. V., Vavilova, L. S., Rastegaeva, M. G., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2013)
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Journal Article
Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)
Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rastegaeva, M. G., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bondarev, A. D., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2012)
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Journal Article
Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures
Slipchenko, S. O., Podoskin, A. A., Pikhtin, N. A., Zolotarev, V. V., Shashkin, I. S., Leshko, A. Y., Lutetskyi, A. V., Rastegaeva, M. G., Tarasov, I. S., Kop’ev, P. S.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2014)
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Journal Article
High-order diffraction gratings for high-power semiconductor lasers
Vasil’eva, V. V., Vinokurov, D. A., Zolotarev, V. V., Leshko, A. Yu, Petrunov, A. N., Pikhtin, N. A., Rastegaeva, M. G., Sokolova, Z. N., Shashkin, I. S., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
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Journal Article
InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
Vinokurov, D. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Rastegaeva, M. G., Rozhkov, A. V., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2010)
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Journal Article
Closed mode structures in large rectangular closed resonators based on AlGaAs/GaAs heterostructures
Romanovich, D.N., Slipchenko, S.O., Podoskin, A.A., Shashkin, I.S., Golovin, V.S., Bakhvalov, K.V., Nikolaev, D.N., Rastegaeva, M.G., Pikhtin, N.A.
Published in 2018 International Conference Laser Optics (ICLO) (01.06.2018)
Published in 2018 International Conference Laser Optics (ICLO) (01.06.2018)
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Conference Proceeding
Investigation of 6H–SiC site competition epitaxy the silane–methane–hydrogen gas system
Zelenin, V.V, Lebedev, A.A, Rastegaeva, M.G, Davidov, D.V, Chelnokov, V.E, Korogodskii, M.L
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes
Syrkin, A.L., Bluet, J.M., Bastide, G., Bretagnon, T., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V
Andreev, A.N., Anikin, M.M., Zelenin, V.V., Ivanov, P.A., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Strel'chuk, A.M., Syrkin, A.L., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Journal Article