Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch
Slipchenko, S. O., Podoskin, A. A., Zolotarev, V. V., Vavilova, L. S., Leshko, A. Yu, Rastegaeva, M. G., Miroshnikov, I. V., Shashkin, I. S., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Padalitsa, A. A., Marmalyuk, A. A., Simakov, V. A.
Published in Bulletin of the Lebedev Physics Institute (01.10.2023)
Published in Bulletin of the Lebedev Physics Institute (01.10.2023)
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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
Veselov, D. A., Shashkin, I. S., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Rastegaeva, M. G., Slipchenko, S. O., Bechvay, E. A., Strelets, V. A., Shamakhov, V. V., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
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Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
Zolotarev, V.V., Leshko, A.Yu, Pikhtin, N.A., Lyutetskiy, A.V., Slipchenko, S.O., Bakhvalov, K.V., Lubyanskiy, Ya.V., Rastegaeva, M.G., Tarasov, I.S.
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2014)
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2014)
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Sensor composites consisting of a ceramic substrate and thin films of TbO x oxides and (TbO x )0.5(YO1.5)0.5 solid solutions
Rastegaev, P. V., Kalinina, M. V., Morozova, L. V., Tikhonov, P. A., Rastegaeva, M. G., Panov, M. F.
Published in Glass physics and chemistry (01.10.2009)
Published in Glass physics and chemistry (01.10.2009)
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High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide
Khvostikov, V. P., Rastegaeva, M. G., Khvostikova, O. A., Sorokina, S. V., Malevskaya, A. V., Shvarts, M. Z., Andreev, A. N., Davydov, D. V., Andreev, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
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Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers
Veselov, D. A., Bobretsova, Yu. K., Rastegaeva, M. G., Voronkova, N. V., Ladugin, M. A., Ryaboshtan, Yu. L., Marmalyuk, A. A., Slipchenko, S. O., Pikhtin, N. A.
Published in 2020 International Conference Laser Optics (ICLO) (02.11.2020)
Published in 2020 International Conference Laser Optics (ICLO) (02.11.2020)
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Conference Proceeding
Surface barrier height in metal-n-6H-SiC structures
Syrkin, A.L., Andreev, A.N., Lebedev, A.A., Rastegaeva, M.G., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Conference Proceeding
Implementation of energy barrier layers for 1550 nm high-power laser diodes
Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.
Published in Journal of luminescence (01.11.2023)
Published in Journal of luminescence (01.11.2023)
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The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
Rastegaeva, M.G., Andreev, A.N., Petrov, A.A., Babanin, A.I., Yagovkina, M.A., Nikitina, I.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Doping of 6H–SiC pn structures by proton irradiation
Strel’chuk, Anatoly M, Lebedev, Alexandre A, Kozlovski, Vitali V, Savkina, Natali S, Davydov, Denis V, Solov’ev, Viktor V, Rastegaeva, Marina G
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1999)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1999)
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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
Shamakhov, V. V., Nikolaev, D. N., Lyutetskiy, A. V., Bakhvalov, K. V., Rastegaeva, M. G., Slipchenko, S. O., Pikhtin, N. A., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
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Journal Article
Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes
Syrkin, A.L., Bluet, J.M., Bastide, G., Bretagnon, T., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes
Kotel’nikov, E. Yu, Katsnel’son, A. A., Kudryashov, I. V., Rastegaeva, M. G., Richter, W., Evtikhiev, V. P., Tarasov, I. S., Alferov, Zh. I.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article
Laser waveguide with a reverse gradient of the refractive index
Kotel’nikov, E. Yu, Kudryashov, I. V., Rastegaeva, M. G., Katsnel’son, A. A., Shkol’nik, A. S., Evtikhiev, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article
850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Shamakhov, V. V., Bakhvalov, K. V., Vasylyeva, V. V., Vavilova, L. S., Rastegaeva, M. G., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2013)
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Journal Article
Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)
Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rastegaeva, M. G., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bondarev, A. D., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2012)
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