Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
LANZA, M, PORTI, M, MICHALOWSKI, P, NAFRIA, M, AYMERICH, X, BENSTETTER, G, LODERMEIER, E, RANZINGER, H, JASCHKE, G, TEICHERT, S, WILDE, L
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high- k stacks observed with CAFM
Lanza, M., Porti, M., Nafria, M., Benstetter, G., Frammelsberger, W., Ranzinger, H., Lodermeier, E., Jaschke, G.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Conference Proceeding
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al@@d2@O@@d3@ based devices
Lanza, M, Porti, M, Nafria, M, Aymerich, X, Benstetter, G, Lodermeier, E, Ranzinger, H, Jaschke, G, Teichert, S, Wilde, L, Michalowski, P
Published in Microelectronic engineering (01.09.2009)
Published in Microelectronic engineering (01.09.2009)
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Journal Article
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al 2O 3 based devices
Lanza, M., Porti, M., Nafria, M., Aymerich, X., Benstetter, G., Lodermeier, E., Ranzinger, H., Jaschke, G., Teichert, S., Wilde, L., Michalowski, P.
Published in Microelectronic engineering (2009)
Published in Microelectronic engineering (2009)
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AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
BENSTETTER, Guenther, BREITSCHOPF, Peter, FRAMMELSBERGER, Werner, RANZINGER, Heiko, REISLHUBER, Peter, SCHWEINBOECK, Thomas
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Conference Proceeding