The effect of surface preparation on the production of low interfacial charge regrown interfaces
Kuech, T.F., Marshall, E., Scilla, G.J., Potemski, R., Ransom, C.M., Hung, M.Y.
Published in Journal of crystal growth (01.09.1986)
Published in Journal of crystal growth (01.09.1986)
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Journal Article
Gate-self-aligned n-channel and p-channel germanium MOSFETs
Ransom, C.M., Jackson, T.N., DeGelormo, J.F.
Published in IEEE transactions on electron devices (01.12.1991)
Published in IEEE transactions on electron devices (01.12.1991)
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Journal Article
Recombination measurement of n-type heavily doped layer in high/low silicon junctions
Bellone, S., Busatto, G., Ransom, C.M.
Published in IEEE transactions on electron devices (01.03.1991)
Published in IEEE transactions on electron devices (01.03.1991)
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Journal Article
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI
Spirito, P., Bellone, S., Ransom, C.M., Busatto, G., Cocorullo, G.
Published in IEEE electron device letters (01.01.1989)
Published in IEEE electron device letters (01.01.1989)
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Journal Article
Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets
Ransom, C.M., Jackson, T.N., DeGelormo, J.F.
Published in [1991] 49th Annual Device Research Conference Digest (1991)
Published in [1991] 49th Annual Device Research Conference Digest (1991)
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