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A Statistical Approach to Analyze the Impact of Random Discrete Dopant (RDD) and Oxide Thickness Variation (OTV) on the Performance of a Low Power Folded Cascode OTA
Dutta, Tanusree, Sarkhel, Saheli, Banerjee, Soham, Pandit, Soumya
Published in Devices for Integrated Circuit (05.04.2025)
Published in Devices for Integrated Circuit (05.04.2025)
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Conference Proceeding
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Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants
Bukhori, M.F., Roy, S., Asenov, A.
Published in 2008 9th European Workshop on Ultimate Integration on Silicon (01.03.2008)
Published in 2008 9th European Workshop on Ultimate Integration on Silicon (01.03.2008)
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Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs
Xingsheng Wang, Binjie Cheng, Brown, Andrew Robert, Millar, Campbell, Kuang, Jente B., Nassif, Sani, Asenov, Asen
Published in IEEE transactions on electron devices (01.08.2013)
Published in IEEE transactions on electron devices (01.08.2013)
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Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation
Lee, Angelica, Brown, Andrew R, Asenov, Asen, Roy, Scott
Published in Superlattices and microstructures (01.09.2003)
Published in Superlattices and microstructures (01.09.2003)
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Behavioural Modelling for Stability of CMOS SRAM Cells Subject to Random Discrete Doping
Wang, Y., Zwolinski, M., Merrett, M.A.
Published in 2008 IEEE International Behavioral Modeling and Simulation Workshop (01.09.2008)
Published in 2008 IEEE International Behavioral Modeling and Simulation Workshop (01.09.2008)
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