Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
Meneghesso, G., Rampazzo, F., Kordos, P., Verzellesi, G., Zanoni, E.
Published in IEEE transactions on electron devices (01.12.2006)
Published in IEEE transactions on electron devices (01.12.2006)
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Journal Article
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions
Meneghini, Matteo, Zanandrea, Alberto, Rampazzo, Fabiana, Stocco, Antonio, Bertin, Marco, Cibin, Giulia, Pogany, Dionyz, Zanoni, Enrico, Meneghesso, Gaudenzio
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Dynamic Behavior of Threshold Voltage and I D – V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
Gao, Zhan, De Santi, Carlo, Rampazzo, Fabiana, Saro, Marco, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Chini, Alessandro, Verzellesi, Giovanni, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect
Gao, Zhan, De Santi, Carlo, Rampazzo, Fabiana, Saro, Marco, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Chini, Alessandro, Verzellesi, Giovanni, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results
Zanoni, Enrico, Rampazzo, Fabiana, De Santi, Carlo, Gao, Zhan, Sharma, Chandan, Modolo, Nicola, Verzellesi, Giovanni, Chini, Alessandro, Meneghesso, Gaudenzio, Meneghini, Matteo
Published in Physica status solidi. A, Applications and materials science (01.12.2022)
Published in Physica status solidi. A, Applications and materials science (01.12.2022)
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Journal Article
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Zanoni, Enrico, De Santi, Carlo, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, De Pieri, Francesco, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo, Chini, Alessandro, Verzellesi, Giovanni
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
Nicoletto, Marco, Caria, Alessandro, Rampazzo, Fabiana, De Santi, Carlo, Buffolo, Matteo, Rossi, Francesca, Huang, Xuanqui, Fu, Houqiang, Chen, Hong, Zhao, Yuji, Gasparotto, Andrea, Becht, Conny, Schwarz, Ulrich T., Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics
Zenari, Michele, Buffolo, Matteo, Rampazzo, Fabiana, De Santi, Carlo, Rossi, Francesca, Lazzarini, Laura, Goyvaerts, Jeroen, Grabowski, Alexander, Gustavsson, Johan S., Baets, Roel, Larsson, Anders, Roelkens, Gunther, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE journal of selected topics in quantum electronics (01.03.2025)
Published in IEEE journal of selected topics in quantum electronics (01.03.2025)
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Journal Article
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
Zhan, Gao, Rampazzo, Fabiana, Santi, Carlo De, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Blanck, Herve, Grunenputt, Jan, Sommer, Daniel, Chen, Ding Yuan, Wen, Kai-Hsin, Chen, Jr-Tai, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Gao, ZHan, Meneghini, Matteo, Harrouche, Kathia, Kabouche, Riad, Chiocchetta, Francesca, Okada, Etienne, Rampazzo, Fabiana, De Santi, Carlo, Medjdoub, Farid, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Microelectronics and reliability (01.08.2021)
Published in Microelectronics and reliability (01.08.2021)
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Journal Article
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Simon-Najasek, Michel, Poppitz, David, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.07.2020)
Published in IEEE transactions on electron devices (01.07.2020)
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Journal Article
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
Nicoletto, Marco, Caria, Alessandro, Rampazzo, Fabiana, De Santi, Carlo, Buffolo, Matteo, Mura, Giovanna, Rossi, Francesca, Huang, Xuanqui, Fu, Houqiang, Chen, Hong, Zhao, Yuji, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE journal of photovoltaics (01.11.2023)
Published in IEEE journal of photovoltaics (01.11.2023)
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Journal Article
Reliability and failure analysis in power GaN-HEMTs: An overview
Meneghini, Matteo, Rossetto, Isabella, De Santi, Carlo, Rampazzo, Fabiana, Tajalli, Alaleh, Barbato, Alessandro, Ruzzarin, Maria, Borga, Matteo, Canato, Eleonora, Zanoni, Enrico, Meneghesso, Gaudenzio
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm$ RF AIGaN/GaN HEMTs submitted to long-term life tests
Gao, Zhan, Chiocchetta, Francesca, Rampazzo, Fabiana, De Santi, Carlo, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
Gao, Zhan, Rampazzo, Fabiana, Meneghini, Matteo, Modolo, Nicola, De Santi, Carlo, Blanck, Hervé, Stieglauer, Hermann, Sommer, Daniel, Grünenpütt, Jan, Kordina, Olof, Chen, Jr-Tai, Jacquet, J-C, Lacam, C., Piotrowicz, S., Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
Saro, Marco, de Pieri, Francesco, Carlotto, Andrea, Fornasier, Mirko, Rampazzo, Fabiana, De Santi, Carlo, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Bisi, Davide, Guidry, Matthew, Keller, Stacia, Mishra, Umesh
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E.
Published in IEEE transactions on electron devices (01.10.2004)
Published in IEEE transactions on electron devices (01.10.2004)
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Journal Article
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
Rzin, M., Meneghini, M., Rampazzo, F., Zhan, V. Gao, De Santi, C., Kabouche, R., Zegaoui, M., Medjdoub, F., Meneghesso, G., Zanoni, E.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article