Nanoscale transport properties at silicon carbide interfaces
Roccaforte, F, Giannazzo, F, Raineri, V
Published in Journal of physics. D, Applied physics (09.06.2010)
Published in Journal of physics. D, Applied physics (09.06.2010)
Get full text
Journal Article
Critical issues for interfaces to p-type SiC and GaN in power devices
Roccaforte, F., Frazzetto, A., Greco, G., Giannazzo, F., Fiorenza, P., Nigro, R. Lo, Saggio, M., Leszczyński, M., Pristawko, P., Raineri, V.
Published in Applied surface science (15.08.2012)
Published in Applied surface science (15.08.2012)
Get full text
Journal Article
Conference Proceeding
Surface and interface issues in wide band gap semiconductor electronics
Roccaforte, F., Giannazzo, F., Iucolano, F., Eriksson, J., Weng, M.H., Raineri, V.
Published in Applied surface science (15.07.2010)
Published in Applied surface science (15.07.2010)
Get full text
Journal Article
Conference Proceeding
Highly Efficient Low Reverse Biased 4H-SiC Schottky Photodiodes for UV-Light Detection
Mazzillo, M., Condorelli, G., Castagna, M.E., Catania, G., Sciuto, A., Roccaforte, F., Raineri, V.
Published in IEEE photonics technology letters (01.12.2009)
Published in IEEE photonics technology letters (01.12.2009)
Get full text
Journal Article
Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2
Ruffino, F, Grimaldi, MG, Giannazzo, F, Roccaforte, F, Raineri, V
Published in Nanoscale research letters (06.01.2009)
Published in Nanoscale research letters (06.01.2009)
Get full text
Journal Article
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications
Sciuto, A, D'Arrigo, G, Roccaforte, F, Mazzillo, M, Spinella, R C, Raineri, V
Published in IEEE transactions on electron devices (01.03.2011)
Published in IEEE transactions on electron devices (01.03.2011)
Get full text
Journal Article
Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
ROCCAFORTE, F, LA VIA, F, RAINERI, V, MUSUMECI, P, CALCAGNO, L, CONDORELLI, G. G
Published in Applied physics. A, Materials science & processing (01.11.2003)
Published in Applied physics. A, Materials science & processing (01.11.2003)
Get full text
Journal Article
A Simple Route to the Synthesis of Pr2O3 High-k Thin Films
Lo Nigro, R., Toro, R.G., Malandrino, G., Raineri, V., Fragalà, I.L.
Published in Advanced materials (Weinheim) (04.07.2003)
Published in Advanced materials (Weinheim) (04.07.2003)
Get full text
Journal Article
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide
LA VIA, F, ROCCAFORTE, F, MAKHTARI, A, RAINERI, V, MUSUMECI, P, CALCAGNO, L
Published in Microelectronic engineering (2002)
Published in Microelectronic engineering (2002)
Get full text
Conference Proceeding
Journal Article
Influence of substrate dielectric permittivity on local capacitive behavior in graphene
Sonde, S., Vecchio, C., Giannazzo, F., Lo Nigro, R., Raineri, V., Rimini, E.
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2012)
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2012)
Get full text
Journal Article
Conference Proceeding
Improvement of high temperature stability of nickel contacts on n-type 6H–SiC
Roccaforte, F., La Via, F., Raineri, V., Calcagno, L., Musumeci, P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
Get full text
Journal Article
Conference Proceeding
Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene
Sonde, S., Vecchio, C., Giannazzo, F., Yakimova, R., Raineri, V., Rimini, E.
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2012)
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2012)
Get full text
Journal Article
Conference Proceeding
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Iucolano, F., Giannazzo, F., Roccaforte, F., Romano, L., Grimaldi, M.G., Raineri, V.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2007)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2007)
Get full text
Journal Article
Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
La Via, F., Roccaforte, F., Raineri, V., Mauceri, M., Ruggiero, A., Musumeci, P., Calcagno, L., Castaldini, A., Cavallini, A.
Published in Microelectronic engineering (01.11.2003)
Published in Microelectronic engineering (01.11.2003)
Get full text
Journal Article
Conference Proceeding