Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
CHEN, Yu-Sheng, LEE, Heng-Yuan, CHEN, Frederick, TSAI, Ming-Jinn, KU, Tzu-Kun, CHEN, Pang-Shiu, CHEN, Wei-Su, TSAI, Kan-Hsueh, GU, Pei-Yi, WU, Tai-Yuan, TSAI, Chen-Han, RAHAMAN, S. Z, LIN, Yu-De
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Journal Article
Novel Defects-Trapping / RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wei-Su Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Rahaman, S. Z., Yu-De Lin, Chen, Frederick, Ming-Jinn Tsai, Tzu-Kun Ku
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Journal Article
Improved Resistive Switching Memory Characteristics Using Core-Shell IrO x Nano-Dots in Al 2 O 3 /WO x Bilayer Structure
Banerjee, W., Maikap, S., Rahaman, S. Z., Prakash, A., Tien, T.-C., Li, W.-C., Yang, J.-R.
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
Rahaman, S Z, Maikap, S, Lin, C.-H, Tzeng, P.-J, Lee, H Y, Wu, T.-Y, Chen, Y S, Chen, F, Kao, M.-J, Tsai, M
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
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Conference Proceeding
Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte
Rahaman, S. Z., Maikap, S., Chiu, H.-C., Lin, C.-H., Wu, T.-Y., Chen, Y.-S., Tzeng, P.-J., Chen, F., Kao, M.-J., Tsai, M.-J.
Published in Electrochemical and solid-state letters (2010)
Published in Electrochemical and solid-state letters (2010)
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Journal Article
Highly robust self-compliant and nonlinear TaOX/HfOX RRAM for 3D vertical structure in 1TnR architecture
Lin, Y. D., Chen, Y. S., Tsai, K. H., Chen, P. S., Huang, Y. C., Lin, S. H., Gu, P. Y., Chen, W. S., Chen, P. S., Lee, H. Y., Rahaman, S. Z., Hsu, C. H., Chen, F. T., Ku, T. K.
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
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Conference Proceeding
Ti/HfO2 Based RRAM Operation Voltage Scaling for Embedded Memory
Tsai, C.H., Chen, F. T., Lee, H.Y., Chen, Y.S., Tsai, K.H., Wu, T.Y., Rahaman, S.Z., Gu, P.Y., Chen, W. S., Chen, P.S., Lin, Z.H., Tseng, P.L., Lin, W.P., Lin, C.H., Sheu, S.S., Tsai, M. J., Ku, T.K.
Published in ECS transactions (01.01.2013)
Published in ECS transactions (01.01.2013)
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Journal Article
Resistance instabilities in a filament-based resistive memory
Chen, F. T., Heng-Yuan Lee, Yu-Sheng Chen, Rahaman, S. Z., Chen-Han Tsai, Kan-Hsueh Tsai, Tai-Yuan Wu, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Li-Heng Lee, Tzu-Kun Ku, Pang-Shiu Chen
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
Bipolar Resistive Switching Characteristics Using Al/Cu/GeO x /W Memristors
Maikap, Siddheswar, Rahaman, S. Z.
Published in Meeting abstracts (Electrochemical Society) (12.04.2012)
Published in Meeting abstracts (Electrochemical Society) (12.04.2012)
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Journal Article
Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)
Rahaman, S. Z., Chang, Y.-J., Hsin, Y.-C., Yang, S.-Y., Chen, F.-M., Chen, K.-M., Wang, I-J., Lee, H.-H., Chen, G.-L., Su, Y.-H., Shih, C.-Y., Chiu, S.-C., Wei, J.-H., Yen, S.-C., Huang, K.-C., Chen, C.-C., Chen, M.-C., Sheu, S.-S., Lo, W.-C., Chang, S.-Z., See, Y.-C., Deng, D.-L., Wu, C.-I
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
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Conference Proceeding
A Large Dynamic Range Current Sensor Using Magnetic Tunnel Junction on 8" Si process line
Wang, D. Y., Wang, I. J., Lin, C. S., Su, J. W., Lee, H. H., Hsin, Y. C., Yang, S. Y., Chang, Y. J., Kuo, Y. C., Su, Y.H., Rahaman, S. Z., Chen, G. L., Li, S. H., Wei, J. H., Huang, K. C., Wu, C. I.
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
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