256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
Kang, Dongku, Jeong, Woopyo, Kim, Chulbum, Kim, Doo-Hyun, Cho, Yong Sung, Kang, Kyung-Tae, Ryu, Jinho, Kang, Kyung-Min, Lee, SungYeon, Kim, Wandong, Lee, Hanjun, Yu, Jaedoeg, Choi, Nayoung, Jang, Dong-Su, Lee, Cheon An, Min, Young-Sun, Kim, Moo-Sung, Park, An-Soo, Son, Jae-Ick, Kim, In-Mo, Kwak, Pansuk, Jung, Bong-Kil, Lee, Doo-Sub, Kim, Hyunggon, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-Yup, Park, Ki-Tae, Kyung, Kye-Hyun
Published in IEEE journal of solid-state circuits (01.01.2017)
Published in IEEE journal of solid-state circuits (01.01.2017)
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Journal Article
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
KIM, Chulbum, RYU, Jinho, LEE, Dooseop, KWAK, Pansuk, CHO, Seongsoon, YIM, Yongsik, CHO, Changhyun, JEONG, Woopyo, PARK, Kwangil, HAN, Jin-Man, SONG, Duheon, KYUNG, Kyehyun, LEE, Taesung, LIM, Young-Ho, JUN, Young-Hyun, KIM, Hyunggon, LIM, Jaewoo, JEONG, Jaeyong, SEO, Seonghwan, JEON, Hongsoo, KIM, Bokeun, LEE, Inyoul
Published in IEEE journal of solid-state circuits (01.04.2012)
Published in IEEE journal of solid-state circuits (01.04.2012)
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Journal Article
Conference Proceeding
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming
Ki-Tae Park, Sangwan Nam, Daehan Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Min-Su Kim, Hyun-Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Shim, Dong-Kyo, Ahn, Yang-Lo, Ryu, Jinho, Kim, Donghyun, Yun, Kyunghwa, Kwon, Joonsoo, Shin, Seunghoon, Byeon, Dae-Seok, Choi, Kihwan, Han, Jin-Man, Kyung, Kye-Hyun, Choi, Jeong-Hyuk, Kim, Kinam
Published in IEEE journal of solid-state circuits (01.01.2015)
Published in IEEE journal of solid-state circuits (01.01.2015)
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Journal Article
APERTURED OUTER COVER FOR ABSORBENT ARTICLES
KIM KYUNGNAK, HWANG EOYEON, RYU JINHO, PARK SEUNGKEUN, LEE JINHEE, CHO SOOYONG
Year of Publication 15.06.2016
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Year of Publication 15.06.2016
Patent
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
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Conference Proceeding
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming
Ki-Tae Park, Jin-man Han, Daehan Kim, Sangwan Nam, Kihwan Choi, Min-Su Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun-wook Park, Sang-won Shim, Hyun-Jun Yoon, Doohyun Kim, Sang-won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyungwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyung-Gon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jaehoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kye-Hyun Kyung, Jeong-Hyuk Choi
Published in 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (01.02.2014)
Published in 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (01.02.2014)
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Conference Proceeding