Phase-change memory device having a barrier layer and manufacturing method
CHO SUNG-LAE, LEE SE-HO, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE SU-YOUN, JEONG CHANG-WOOK, KUH BONG-JIN, AHN SU-JIN, HWANG YOUNG-NAM
Year of Publication 12.08.2008
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Year of Publication 12.08.2008
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SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC SYSTEMS EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME
HA YONG-HO, CHO SUNG-LAE, LEE SE-HO, YI JI-HYE, KUH BONG-JIN, AHN SU-JIN, PARK SOON-OH, NAM SANG-DON, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE CHOONG-MAN, LEE SU-YOUN, JEONG CHANG-WOOK, SONG YOON-JONG, HWANG YOUNG-NAM, LEE JANG-EUN
Year of Publication 23.04.2009
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Year of Publication 23.04.2009
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Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
HA YONG-HO, CHO SUNG-LAE, LEE SE-HO, YI JI-HYE, KUH BONG-JIN, AHN SU-JIN, PARK SOON-OH, NAM SANG-DON, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE CHOONG-MAN, LEE SU-YOUN, JEONG CHANG-WOOK, SONG YOON-JONG, HWANG YOUNG-NAM, LEE JANG-EUN
Year of Publication 27.01.2009
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Year of Publication 27.01.2009
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Resistive memory device and method of forming the same
RYOO, KYUNGANG, JEONG, GI-TAE, LIM, DONG-WON, KIM, HYEONG-JUN, JEONG, HONG-SIK
Year of Publication 01.11.2009
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Year of Publication 01.11.2009
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Resistive memory device and method of forming the same
RYOO, KYUNGANG, OH, JAE-HEE, PARK, JUNG-HOON, LIM, DONG-WON, KIM, HYEONG-JUN
Year of Publication 16.10.2009
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Year of Publication 16.10.2009
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Resistive memory devices and method of forming the same
RYOO KYUNGANG, LIM DONG-WON, KIM HYEONG-JUN, JEONG HONG-SIK, JEONG GI-TAE
Year of Publication 16.09.2009
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Year of Publication 16.09.2009
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Resistive memory devices and method of forming the same
OH JAE-HEE, RYOO KYUNGANG, LIM DONG-WON, KIM HYEONG-JUN, PARK JUNG-HOON
Year of Publication 16.09.2009
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Year of Publication 16.09.2009
Patent
Phase-change memory device having a barrier layer and manufacturing method
CHO SUNG-LAE, LEE SE-HO, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE SU-YOUN, JEONG CHANG-WOOK, KUH BONG-JIN, AHN SU-JIN, HWANG YOUNG-NAM
Year of Publication 01.12.2005
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Year of Publication 01.12.2005
Patent
Semiconductor memory device, for electronic system, comprises phase changeable material pattern overlying protrusion portion of molding layer, and oxidation barrier layer covering the phase-changeable material and protrusion portion
RYOO, KYUNGANG, LEE, JANG-EUN, SONG, YOON-JONG, LEE, CHOONG-MAN, KOH, GWAN-HYEOB, LEE, SU-YOUN, HA, YONG-HO, JEONG, CHANG-WOOK, NAM, SANG-DON, CHO, SUNG-LAE, YI, JI-HYE, PARK, SOON-OH, KUH, BONG-JIN, LEE, SE-HO, HWANG, YOUNG-NAM, AHN, SU-JIN
Year of Publication 16.02.2006
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Year of Publication 16.02.2006
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SEMICONDUCTOR DEVICE COMPRISING PHASE CHANGE MEMORY ELEMENT COVERED WITH OXYGEN BARRIER FILM, ELECTRONIC SYSTEM USING THE SAME, AND METHOD OF MANUFACTURING THE SAME
HA YONG-HO, CHO SUNG-LAE, LEE SE-HO, YI JI-HYE, KUH BONG-JIN, AHN SU-JIN, PARK SOON-OH, NAM SANG-DON, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE CHOONG-MAN, LEE SU-YOUN, JEONG CHANG-WOOK, SONG YOON-JONG, HWANG YOUNG-NAM, LEE JANG-EUN
Year of Publication 08.12.2005
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Year of Publication 08.12.2005
Patent
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
HA YONG-HO, CHO SUNG-LAE, LEE SE-HO, YI JI-HYE, KUH BONG-JIN, AHN SU-JIN, PARK SOON-OH, NAM SANG-DON, RYOO KYUNGANG, KOH GWAN-HYEOB, LEE CHOONG-MAN, LEE SU-YOUN, JEONG CHANG-WOOK, SONG YOON-JONG, HWANG YOUNG-NAM, LEE JANG-EUN
Year of Publication 01.12.2005
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Year of Publication 01.12.2005
Patent
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH
Year of Publication 30.11.2005
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Year of Publication 30.11.2005
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